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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460

Materials Science Forum Vols. 457-460

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460

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Table of Contents

Paper Title Page

Triangular Pore Formation in Highly Doped n-Type 4H SiC

Authors: Y. Shishkin, Wolfgang J. Choyke, Robert P. Devaty

1467

Porous Structure of Anodized p-Type 6H SiC

Authors: Y. Shishkin, Yue Ke, Robert P. Devaty, Wolfgang J. Choyke

1471

Vibrational and Emission Properties of Porous 6H-SiC

Authors: A.M. Rossi, V. Ballarini, Sergio Ferrero, Fabrizio Giorgis

1475

Porous SiC for HT Chemical Sensing Devices: an Assessment of its Thermal Stability

Authors: J. Bai, Govindhan Dhanaraj, Pelagia Irene Gouma, Michael Dudley, Marina G. Mynbaeva

1479

SiC Base Micro-Probe for Myocardial Ischemia Monitoring

Authors: Jordi Pascual, F. Valvo, Philippe Godignon, J. Aguiló, José Millan, Jean Camassel, Narcis Mestres

1483

Electrical Characterisation of the Gamma and UV Irradiated Epitaxial 1.2 kV 4H-SiC PiN Diodes

Authors: Maciej Wolborski, Mietek Bakowski, W. Klamra

1487

Demonstration of the First 4H-SiC Metal-Semiconductor-Metal Ultraviolet Photodector

Authors: Z. Wu, X. Xin, Feng Yan, Jian Hui Zhao

1491

Towards the Fabrication and Measurement of High Sensitivity SiC-UV Detectors with Oxide Ramp Termination

Authors: Gheorghe Brezeanu, Philippe Godignon, E. Dimitrova, Christophe Raynaud, Dominique Planson, Andrej Mihaila, F. Udrea, José Millan, G. Amaratunga, C. Boianceanu

1495

Hydrogen Gas Sensors using 3C-SiC/Si Epitaxial Layers

Authors: T.J. Fawcett, J.T. Wolan, Rachael L. Myers-Ward, J. Walker, Stephen E. Saddow

1499

Electrical and Optical Characterization of Electron Irradiated X Rays Detectors Based on 4H-SiC Epitaxial Layers

Authors: Alessia Le Donne, Simona Binetti, Maurizio Acciarri, Antonio Castaldini, Filippo Nava, Anna Cavallini, Sergio Pizzini

1503