Materials Science Forum Vols. 457-460

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https://doi.org/10.4028/www.scientific.net/MSF.457-460

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Paper Title Page

Investigation of SiO₂/SiC Interface using Positron Annihilation Technique

Authors: Masaki Maekawa, Atsuo Kawasuso, Masahito Yoshikawa, Ayahiko Ichimiya

1301

A Comparison between SiO₂/4H-SiC Interface Traps on (0001) and (11-20) Faces

Authors: H.Ö. Ólafsson, Christer Hallin, E.Ö. Sveinbjörnsson

1305

Interface Properties of 4H-SiC/SiO₂ with MOS Capacitors and FETs Annealed in O₂, N₂O, NO and CO₂

Authors: W. Wang, S. Banerjee, T. Paul Chow, Ronald J. Gutmann, Tamara Isaacs-Smith, John R. Williams, Kenneth A. Jones, Aivars J. Lelis, W. Tipton, Skip Scozzie, Anant K. Agarwal

1309

Initial Oxidation of 6H-SiC (0001) (3 x 3)-R30° and 3 x 3 Surfaces Studied by AES and RHEED

Authors: Tomohiro Aoyama, W. Voegeli, Ayahiko Ichimiya, Yoshiyuki Hisada, Shinichi Mukainakano

1313

Initial Stages of Thermal Oxidation of 4H-SiC (11-20) Studied by Photoelectron Spectroscopy

Authors: Thomas Seyller, Konstantin V. Emtsev, R. Graupner, Lothar Ley

1317

Oxidation Studies of Non-Polar 4H-SiC Surfaces

Authors: Charíya Virojanadara, Leif I. Johansson

1321

Carbon-Terminated 3C-SiC(100) Surface Oxidation Studied by High-Resolution Core Level Photoemission Spectroscopy using Synchrotron Radiation

Authors: J. Roy, M. Silly, H. Enriquez, P. Soukiassian, C. Crotti, S. Fontana, P. Perfetti

1325

A Photoemission Study of Polar and Non-Polar SiC Surfaces Oxidized in N₂O

Authors: Leif I. Johansson, Charíya Virojanadara, Th. Eickhoff, W. Drube

1329

Radical Nitridation of Ultra-Thin SiO₂/SiC Structure

Authors: Hiroshi Yano, Y. Furumoto, T. Niwa, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki

1333

Ellipsometric Study of Thermal Silicon Oxide and Sacrificial Silicon Oxide on 4H-SiC

Authors: L. Chen, Owen James Guy, G. Pope, K.S. Teng, T. Maffeis, S.P. Wilks, Philip Andrew Mawby, T.E. Jenkins, A. Brieva, D.J. Hayton

1337