Volumes

Materials Science Forum
Vols. 475-479

Materials Science Forum
Vols. 473-474

Materials Science Forum
Vols. 471-472

Materials Science Forum
Vols. 467-470

Materials Science Forum
Vols. 465-466

Materials Science Forum
Vols. 461-464

Materials Science Forum
Vols. 457-460

Materials Science Forum
Vols. 455-456

Materials Science Forum
Vols. 453-454

Materials Science Forum
Vols. 449-452

Materials Science Forum
Vols. 447-448

Materials Science Forum
Vols. 445-446

Materials Science Forum
Vols. 443-444

HomeMaterials Science ForumMaterials Science Forum Vols. 457-460

Materials Science Forum Vols. 457-460

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460

Export:

ToC:

Table of Contents

Paper Title Page

A High Voltage (1570V) 4H-SiC Bipolar Darlington with Current Gain β>640 and Tested in a Half-Bridge Inverter up to 20A at V_Bus=900V

Authors: Jian Hui Zhao, Jian Hui Zhang, Peter Alexandrov, Terry Burke

1169

A High Voltage (1,750V) and High Current Gain (β=24.8) 4H-SiC Bipolar Junction Transistor using a Thin (12 μm) Drift layer

Authors: Jian Hui Zhao, Jian Hui Zhang, Peter Alexandrov, Larry X. Li, Terry Burke

1173

Effect of Passivation on Device Stability and Gate Reverse Characteristics on 4H-SiC MESFETs

Authors: Alexandre Kerlain, Erwan Morvan, Christian Dua, N. Caillas, Christian Brylinski

1177

Fabrication and Characterization of 4H-SiC Planar MESFET Using Ion- Implantation

Authors: Hoon Joo Na, Dae Hwan Kim, Sang Yong Jung, In Bok Song, Myung Yoon Um, Ho Keun Song, Jae Kyeong Jeong, Jae Bin Lee, Hyeong Joon Kim

1181

Deep Level Investigation by Current and Capacitance Transient Spectroscopy in 4H-SiC MESFETs on Semi-Insulating Substrates

Authors: M. Gassoumi, N. Sghaier, I. Dermoul, F. Chekir, H. Maaref, Jean Marie Bluet, Gérard Guillot, Erwan Morvan, Olivier Noblanc, Christian Dua, Christian Brylinski

1185

600V 4H-SiC RESURF-Type JFET

Authors: Kazuhiro Fujikawa, Shinsuke Harada, Atsuo Ito, Tsunenobu Kimoto, Hiroyuki Matsunami

1189

Influence of Buffer Layer on DC and RF Performance of 4H SiC MESFET

Authors: A.V. Los, Michael S. Mazzola, D. Kajfez, B.T. McDaniel, C.E. Smith, James W. Kretchmer, L.B. Rowland, Jeff B. Casady

1193

Design of 1.7 to 14 kV Normally-Off Trenched and Implanted Vertical JFET in 4H-SiC

Authors: Larry X. Li, Jian Hui Zhao

1197

Optimization of Vertical Silicon Carbide Field Effect Transistors towards a Cost Attractive SiC Power Switch

Authors: Peter Friedrichs, Rudolf Elpelt, Reinhold Schörner, Heinz Mitlehner, Dietrich Stephani

1201

RF Performance and Reliability of SiC MESFETs on High Purity Semi-Insulating Substrates

Authors: Saptharishi Sriram, A. Ward, C. Janke, T.S. Alcorn, H. Hagleitner, Jason Henning, K. Wieber, Jason R. Jenny, Joseph J. Sumakeris, S.T. Allen

1205