Materials Science Forum Vols. 457-460

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https://doi.org/10.4028/www.scientific.net/MSF.457-460

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Paper Title Page

Simulation and Prototype Fabrication of Microwave Modulators with 4H-SiC p-i-n Diodes

Authors: A.V. Bludov, Mykola S. Boltovets, Konstantin Vassilevski, A.V. Zorenko, Konstantinos Zekentes, Alexander A. Lebedev, Valentyn A. Krivutsa

1089

Bulk SiC Devices for High Radiation Environments

Authors: William Cunningham, M. Cooke, J. Melone, M. Horn, V. Kazukauskas, P.R. Roy, F. Doherty, M. Glaser, Juozas Vidmantis Vaitkus, Mahfuzur Rahman, D. Rezel

1093

2.5KV-30A Inductively Loaded Half-Bridge Inverter Switching using 4H-SiC MPS Free-Wheeling Diodes

Authors: Yu Zhu Li, Leonid Fursin, J. Wu, Peter Alexandrov, Jian Hui Zhao

1097

Design and Implementation of the Optimized Edge Termination in 1.8 kV 4H-SiC PiN Diodes

Authors: Igor Sankin, W.A. Draper, J. Neil Merrett, Janna R. B. Casady, Jeff B. Casady

1101

High Power 4H-SiC PiN Diodes with Minimal Forward Voltage Drift

Authors: Mrinal K. Das, Joseph J. Sumakeris, Michael J. Paisley, Adrian R. Powell

1105

4,308V, 20.9 mΩ-cm² 4H-SiC MPS Diodes Based on a 30μm Drift Layer

Authors: J. Wu, Leonid Fursin, Yu Zhu Li, Peter Alexandrov, Jian Hui Zhao

1109

Approaches to Stabilizing the Forward Voltage of Bipolar SiC Devices

Authors: Joseph J. Sumakeris, Mrinal K. Das, H. McD. Hobgood, Stephan G. Müller, Michael J. Paisley, Seoyong Ha, Marek Skowronski, John W. Palmour, Calvin H. Carter Jr.

1113

Extrinsic Base Design of SiC Bipolar Transistors

Authors: Erik Danielsson, Martin Domeij, Carl Mikael Zetterling, Mikael Östling, Adolf Schöner

1117

Analysis of Power Dissipation and High Temperature Operation in 4H-SiC Bipolar Junction Transistors with 4.9 MW/cm² Power Density Handling Ability

Authors: Ivan Perez-Wurfl, John Torvik, B. Van Zeghbroeck

1121

Simple Self-Aligned Fabrication Process for Silicon Carbide Static Induction Transistors

Authors: K. Dynefors, V. Desmaris, Joakim Eriksson, Per Åke Nilsson, Niklas Rorsman, Herbert Zirath

1125