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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460

Materials Science Forum Vols. 457-460

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460

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Table of Contents

Paper Title Page

First Principles Derivation of Carrier Transport across Metal - SiC Barriers

Authors: C.B. Dimitriu, Alton B. Horsfall, Nicolas G. Wright, C. Mark Johnson, Konstantin Vassilevski, Anthony G. O'Neill

969

Modeling of the Influence of Schottky Barrier Inhomogeneities on SiC Diode Characteristics

Authors: Roland Weiss, Lothar Frey, Heiner Ryssel

973

Theoretical Investigations of Microwave Characteristics of Tunnett Diodes Made of Silicon Carbide

Authors: V.V. Buniatyan, V.M. Aroutiounian, Konstantinos Zekentes, Nicolas Camara, P. Soukiassian

977

Challenges and First Results of SiC Schottky Diode Manufacturing using a 3-Inch Technology

Authors: Michael Treu, Roland Rupp, Helmut Brunner, Fanny Dahlquist, Christian Hecht

981

4H-SiC Power Schottky Diodes. On the Way to Solve the Size Limiting Issues

Authors: Alexander Syrkin, Vladimir Dmitriev, V. Soukhoveev, Marina G. Mynbaeva, Roumen Kakanakov, Christer Hallin, Erik Janzén

985

Edge Termination of SiC Schottky Diodes with Guard Rings Formed by High Energy Boron Implantation

Authors: Konstantin Vassilevski, Alton B. Horsfall, C. Mark Johnson, Nicolas G. Wright

989

Extraction of the Schottky Barrier Height for Ti/Al Contacts on 4H-SiC from I-V and C-V Measurements

Authors: Francesco Moscatelli, Andrea Scorzoni, Antonella Poggi, G.C. Cardinali, Roberta Nipoti

993

Origin of Leakage Current in SiC Schottky Barrier Diodes at High Temperature

Authors: Hiroaki Saitoh, Tsunenobu Kimoto, Hiroyuki Matsunami

997

Improvements in the Reverse Characteristics of 4H-SiC Schottky Barrier Diodes by Hydrogen Treatments

Authors: Dae Hwan Kim, Hoon Joo Na, Sang Yong Jung, In Bok Song, Myung Yoon Um, Ho Keun Song, Jae Kyeong Jeong, Jae Bin Lee, Hyeong Joon Kim

1001

P-n Junction Periphery Protection of 4H-SiC Power p-i-n Diodes Using Epitaxy and Dry Etching

Authors: G. Sarov, T. Cholakova, Roumen Kakanakov

1005