Authors: Servane Blanqué, R. Pérez, Philippe Godignon, Narcis Mestres, Erwan Morvan, Alexandre Kerlain, Christian Dua, Christian Brylinski, Marcin Zielinski, Jean Camassel

893

Effect of Implantation Temperature on Redistribution of Al in SiC during Annealing

Authors: I.O. Usov, A.A. Suvorova, A.V. Suvorov

897

Effects of Annealing Conditions on Resistance Lowering of High-Phosphorus-Implanted 4H-SiC

Authors: Junji Senzaki, Kenji Fukuda, Kazuo Arai

901

Characterization of Electrical Properties in High-Dose Implanted and Post-Implantation-Annealed 4H-SiC Wafers using Infrared Reflectance Spectroscopy

Authors: K. Narita, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Junji Senzaki, Shinichi Nakashima

905

Annealing Process of N⁺-/P⁺-Ions Coimplanted along with Si⁺-, C⁺- or Ne⁺-Ions into 4H-SiC – Governed by Formation of Electrically Neutral Complexes or by Site-Competition-Effect?

Authors: Frank Schmid, Gerhard Pensl

909

Low Sheet Resistance of High-Dose Aluminium Implanted 4H-SiC using (11-20) Face

Authors: Yuki Negoro, K. Katsumoto, Hiroyuki Matsunami, Tsunenobu Kimoto, Gerhard Pensl, Frank Schmid

913

Boron Diffusion in Intrinsic, n-Type and p-Type 4H-SiC

Authors: Margareta K. Linnarsson, Martin S. Janson, Adolf Schöner, Andrey O. Konstantinov, Bengt Gunnar Svensson

917