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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460

Materials Science Forum Vols. 457-460

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460

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Paper Title Page

Fabrication of Mesa-Type pn Diodes without Forward Degradation on Ultra-High-Quality 6H-SiC Substrate

Authors: Yasunori Tanaka, Takaya Ohno, Naoki Oyanagi, Shin Ichi Nishizawa, Takaya Suzuki, Kenji Fukuda, Tsutomu Yatsuo, Kazuo Arai

1009

Fabrication and Characterization of 4H-SiC pn Diode with Field Limiting Ring

Authors: Wook Bahng, Geun Ho Song, Hyoung Wook Kim, K.S. Seo, Nam Kyun Kim

1013

Current Transport Mechanisms in 4H-SiC PiN Diodes

Authors: Nicolas Camara, Edwige Bano, Konstantinos Zekentes

1017

On-Chip Temperature Monitoring of a SiC Current Limiter

Authors: Dominique Tournier, Philippe Godignon, José Millan, Dominique Planson, Jean-Pierre Chante, F. Sarrus, J.-F. de Palma

1021

The Role of the Ion Implanted Emitter State on 6H-SiC Power Diodes Behavior. A Statistical Study

Authors: Mihai Lazar, G.C. Cardinali, Christophe Raynaud, Antonella Poggi, Dominique Planson, Roberta Nipoti, Jean-Pierre Chante

1025

Low Voltage Silicon Carbide Zener Diode

Authors: Konstantin Vassilevski, Konstantinos Zekentes, Alton B. Horsfall, C. Mark Johnson, Nicolas G. Wright

1029

Design, Fabrication and Characterization of 5 kV 4H-SiC p⁺n Planar Bipolar Diodes Protected by Junction Termination Extension

Authors: Christophe Raynaud, Mihai Lazar, Dominique Planson, Jean-Pierre Chante, Z. Sassi

1033

Comparison between Implanted and Epitaxial PiN-Diodes on 4H-Silicon Carbide

Authors: Uwe Zimmermann, Martin Domeij, Anders Hallén, Mikael Östling

1037

4H-SiC p-n Diode using Internal Ring (IR) Termination Technique

Authors: Geun Ho Song, Hyoung Wook Kim, Wook Bahng, Sang Cheol Kim, Nam Kyun Kim

1041

Numerical Study of Current Crowding Phenomenon in Complementary 4H-SiC JBS Rectifiers

Authors: Toomas Rang, G. Higelin, R. Kurel

1045