Effects of Annealing Conditions on Resistance Lowering of High-Phosphorus-Implanted 4H-SiC

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Materials Science Forum (Volumes 457-460)

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Roland Madar, Jean Camassel and Elisabeth Blanquet

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901-904

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J. Senzaki et al., "Effects of Annealing Conditions on Resistance Lowering of High-Phosphorus-Implanted 4H-SiC ", Materials Science Forum, Vols. 457-460, pp. 901-904, 2004

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June 2004

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