Effects of Annealing Conditions on Resistance Lowering of High-Phosphorus-Implanted 4H-SiC

Junji Senzaki; Kenji Fukuda; Kazuo Arai

doi:10.4028/www.scientific.net/MSF.457-460.901

Paper Titles

Effect of High-Dose Aluminium Implantation on 4H-SiC Oxidation
p.885

Structural Defects Formed in Al-Implanted and Annealed 4H-SiC
p.889

Room Temperature Implantation and Activation Kinetics of Nitrogen and Phosphorus in 4H-SiC Crystals
p.893

Effect of Implantation Temperature on Redistribution of Al in SiC during Annealing
p.897

Effects of Annealing Conditions on Resistance Lowering of High-Phosphorus-Implanted 4H-SiC
p.901

Characterization of Electrical Properties in High-Dose Implanted and Post-Implantation-Annealed 4H-SiC Wafers using Infrared Reflectance Spectroscopy
p.905

Annealing Process of N⁺-/P⁺-Ions Coimplanted along with Si⁺-, C⁺- or Ne⁺-Ions into 4H-SiC – Governed by Formation of Electrically Neutral Complexes or by Site-Competition-Effect?
p.909

Low Sheet Resistance of High-Dose Aluminium Implanted 4H-SiC using (11-20) Face
p.913

Boron Diffusion in Intrinsic, n-Type and p-Type 4H-SiC
p.917

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Effects of Annealing Conditions on Resistance Lowering of High-Phosphorus-Implanted 4H-SiC

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Materials Science Forum (Volumes 457-460)

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901-904

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https://doi.org/10.4028/www.scientific.net/MSF.457-460.901

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Online since:

June 2004

Authors:

Junji Senzaki, Kenji Fukuda, Kazuo Arai

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4H-SiC, Carrier Concentration, Carrier Mobility, Hall-Effect Measurement, Ion Implantation, Post Implantation Annealing, Sheet Resistance

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