Effects of Annealing Conditions on Resistance Lowering of High-Phosphorus-Implanted 4H-SiC

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

901-904

DOI:

10.4028/www.scientific.net/MSF.457-460.901

Citation:

J. Senzaki et al., "Effects of Annealing Conditions on Resistance Lowering of High-Phosphorus-Implanted 4H-SiC ", Materials Science Forum, Vols. 457-460, pp. 901-904, 2004

Online since:

June 2004

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$35.00

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