Surface Modification of 3C-SiC for Good Ni Ohmic Contact

Jae Il Noh; Seung Hyun Lee; Kee Suk Nahm

doi:10.4028/www.scientific.net/MSF.457-460.809

Paper Titles

Investigation of Electronic States of Pd in 4H-SiC by Means of Radiotracer-DLTS
p.791

Surface Preparation of 6H-Silicon Carbide Substrates for Growth of High-Quality SiC Epilayers
p.797

Electro-Chemical Mechanical Polishing of Silicon Carbide
p.801

Chemi-Mechanical Polishing of On-Axis Semi-Insulating SiC Substrates
p.805

Surface Modification of 3C-SiC for Good Ni Ohmic Contact
p.809

Mechanisms in Electrochemical Etching of α-SiC Substrates
p.813

Modification of the Silicon Carbide by Proton Irradiation
p.817

Etching of SiC with Fluorine ECR Plasma
p.821

Characterization of 3C-SiC Monocrystals Using Positron Annihilation Spectroscopy
p.825

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Surface Modification of 3C-SiC for Good Ni Ohmic Contact

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Silicon Carbide and Related Materials 2003

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Materials Science Forum (Volumes 457-460)

Pages:

809-812

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.809

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Online since:

June 2004

Authors:

Jae Il Noh, Seung Hyun Lee, Kee Suk Nahm

Keywords:

3C-SiC, Chemical Treatment, CMP, Contact Resistance, Ni Ohmic Contact, Surface Damage, Surface Roughness (SR)

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