[1]
P.G. Neudeck Recent Progress in Silicon Carbide Semiconductor Electronics Technology, NASA Lewis research Centre, M.S. 77-1 21000.
Google Scholar
[2]
L.M. Porter et al A critical review of Ohmic and Rectifying contacts for Silicon Carbide, Materials Science and Engineering, B34, 83-105, (1995).
DOI: 10.1016/0921-5107(95)01276-1
Google Scholar
[3]
A. Koh, & G. Pope et al Comparative Surface Study on Wet and Dry Sacrificial Thermal Oxidation on SiC, Applied Surface Science, Vol 174, 210-216, (2001).
DOI: 10.1016/s0169-4332(01)00150-7
Google Scholar
[4]
G. K Reeves Specific Contact Resistance using a Circular Transmission Line Model, SolidState Electronics, 23, 487-490, (1980).
DOI: 10.1016/0038-1101(80)90086-6
Google Scholar
[5]
J. Kriz, et al, Determination of Ohmic Contacts to n-type 6H- and Polycrystalline 3C-SiC using Circular Transmission Line Structures, Diamond and Related Materials, 7, 77-80, (1998).
DOI: 10.1016/s0925-9635(97)00191-x
Google Scholar
[6]
G. S Marlow and M.D. Das The Effect of Contact Size and Non-zero Metal Resistance on the Determination of Specific Contact Resistance, Solid-State Electronics, Vol. 25 no. 2, 91-94, (1982).
DOI: 10.1016/0038-1101(82)90036-3
Google Scholar
[7]
L.M. Porter and R.F. Davis. Mater. Sci. Eng. B 34 (1995), p.83.
Google Scholar
[8]
R. Cheung, J. Hay, E. van der Drift and W. Gao, Solid-State Electronics, Vol. 44, no. 11, 2081- 2083, (2000).
DOI: 10.1016/s0038-1101(00)00155-6
Google Scholar
[9]
Sang Youn Han and Jong-Lam Lee, Journal of the Electrochemical Society, 149 (3) (2002) G189-G193.
Google Scholar