Radiotracer Investigation of Gadolinium Induced Deep Levels in Hexagonal Silicon Carbide

G. Pasold; F. Albrecht; C. Hülsen; R. Sielemann; W.-D. Zeitz; W. Witthuhn

doi:10.4028/www.scientific.net/MSF.457-460.783

Paper Titles

Sc Impurity in Silicon Carbide
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Measurement of Low Level Nitrogen in Silicon Carbide Using SIMS
p.771

Dilute Aluminium Concentration in 4H-SiC: from SIMS to LTPL Measurements
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Crystallinity and Photoluminescence Evaluation of Er-Implanted n-Type 4H-SiC Subjected to an Annealing Process
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Radiotracer Investigation of Gadolinium Induced Deep Levels in Hexagonal Silicon Carbide
p.783

Analysis of Different Vanadium Charge States in Vanadium Doped 6H-SiC by Low Temperature Optical Absorption and Electron Paramagnetic Resonance
p.787

Investigation of Electronic States of Pd in 4H-SiC by Means of Radiotracer-DLTS
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Surface Preparation of 6H-Silicon Carbide Substrates for Growth of High-Quality SiC Epilayers
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Electro-Chemical Mechanical Polishing of Silicon Carbide
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Radiotracer Investigation of Gadolinium Induced Deep Levels in Hexagonal Silicon Carbide

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Materials Science Forum (Volumes 457-460)

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783-786

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https://doi.org/10.4028/www.scientific.net/MSF.457-460.783

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June 2004

Authors:

G. Pasold, F. Albrecht, C. Hülsen, R. Sielemann, W.-D. Zeitz, W. Witthuhn

Keywords:

Deep Level, DLTS, Gadolinium, Rare Earth (RE)

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