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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460

Materials Science Forum Vols. 457-460

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460

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Table of Contents

Paper Title Page

Electrical Transport Properties of n-Type 4H and 6H Silicon Carbide

Authors: Sylvie Contreras, Julien Pernot

555

Further Investigation of Silicon Vacancy-Related Luminescence in 4H and 6H SiC

Authors: John W. Steeds, S.A. Furkert, J.M. Hayes, W. Sullivan

561

Evaluation of Free Carrier Lifetime and Deep Levels of the Thick 4H-SiC Epilayers

Authors: Takeshi Tawara, Hidekazu Tsuchida, Syunsuke Izumi, Isaho Kamata, Kunikaza Izumi

565

Photoluminescence Mapping of a SiC Wafer in Device Processing

Authors: Michio Tajima, T. Sugahara, Norihiro Hoshino, Satoshi Tanimoto, Tetsuo Takahashi, Shinichi Nakashima, T. Yamamoto

569

Spontaneous Polarization of 4H SiC Determined from Optical Emissions of 4H/3C/4H-SiC Quantum Wells

Authors: Song Bai, Robert P. Devaty, Wolfgang J. Choyke, Ute Kaiser, Günter Wagner, Mike F. MacMillan

573

Optical Investigation of Stacking Faults and Micro-Crystalline Inclusions In-Low-Doped 4H-SiC Layers

Authors: Sandrine Juillaguet, Carole Balloud, Julien Pernot, C. Sartel, Véronique Soulière, Jean Camassel, Yves Monteil

577

Characterization of Double Stacking Faults Induced by Thermal Processing of Heavily N-Doped 4H-SiC Substrates

Authors: B.J. Skromme, M.K. Mikhov, L. Chen, G. Samson, Rong Jun Wang, Can Hua Li, I. Bhat

581

Photoluminescence Excitation Spectroscopy on the Donor-Acceptor Pair Luminescence in 4H and 6H SiC

Authors: Ivan G. Ivanov, Erik Janzén

585

Photoluminescence Study of C-H and C-D Centers in 4H SiC

Authors: Song Bai, Fei Yan, Robert P. Devaty, Wolfgang J. Choyke, R. Grötzschel, Günter Wagner, Mike F. MacMillan

589

Optical Characterization of Full SiC Wafer

Authors: I. El Harrouni, Jean Marie Bluet, D. Ziane, Michel Mermoux, Francis Baillet, Gérard Guillot

593