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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460

Materials Science Forum Vols. 457-460

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460

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Table of Contents

Paper Title Page

Investigations of Defects Introduced in 4H-SiC n-Type Epitaxial Layers by Hydrogen DC Plasma

Authors: Laurent Ottaviani, Eugene B. Yakimov, P. Hidalgo, Santo Martinuzzi

509

Midgap Defects in 4H-, 6H- and 3C-SiC Detected by Deep Level Optical Spectroscopy

Authors: Sergey A. Reshanov, Konrad Schneider, Reinhard Helbig, Gerhard Pensl, Hiroyuki Nagasawa, Adolf Schöner

513

Annealing Study on Radiation-Induced Defects in 6H-SiC

Authors: M.V.B. Pinheiro, Th. Lingner, F. Caudepon, Siegmund Greulich-Weber, Johann Martin Spaeth

517

Crystallographic Defects under Surface Morphological Defects of 4H-SiC Homoepitaxial Films

Authors: Tatsuya Okada, Tsunenobu Kimoto, K. Yamai, Hiroyuki Matsunami, F. Inoko

521

Formation of Stacking Faults in Diffused SiC p⁺/n^-/n⁺ and p⁺/p^-/n⁺ Diodes

Authors: Stanislav I. Soloviev, Dimitri I. Cherednichenko, Tangali S. Sudarshan

525

Residual Stresses and Stacking Faults in n-Type 4H-SiC Epilayers

Authors: Robert S. Okojie, M. Zhang, P. Pirouz

529

Stacking Fault Formation Sites and Growth in Thick-Epi SiC PiN Diodes

Authors: Robert E. Stahlbush, Mark E. Twigg, Kenneth G. Irvine, Joseph J. Sumakeris, T. Paul Chow, Peter A. Losee, Lin Zhu, Yi Tang, W. Wang

533

Partial Dislocations and Stacking Faults in 4H-SiC PiN Diodes

Authors: Mark E. Twigg, Robert E. Stahlbush, M. Fatemi, Steve Arthur, Jeffery B. Fedison, Jesse B. Tucker, Shao Ping Wang

537

SiC Studied Via LEEN and Cathodoluminescence Spectroscopy

Authors: Leonard J. Brillson, Sergey P. Tumakha, Robert S. Okojie, M. Zhang, P. Pirouz

543

Properties of the Bound Excitons Associated to the 3838Å Line in 4H-SiC and the 4182Å Line in 6H-SiC

Authors: Anne Henry, Martin S. Janson, Erik Janzén

549