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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460

Materials Science Forum Vols. 457-460

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460

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Paper Title Page

Wettability Study of SiC in Correlation with XPS Analysis

Authors: V. Stambouli, Didier Chaussende, Mikhail Anikin, G. Berthomé, V. Thoreau, J.C. Joud

423

Interface Electronic Structures of Transition Metal(Cr, Fe) on 6H(4H)-SiC(0001)Si Face by Soft X-Ray Fluorescence Spectroscopy

Authors: Masaaki Hirai, Chihiro Kamezawa, S. Azatyan, Z. An, T. Shinagawa, T. Fujisawa, Masahiko Kusaka, Motohiro Iwami

427

Modification of 6H-SiC Surface Defect Structure during Hydrogen Etching

Authors: Robert T. Bondokov, Naveen Tipirneni, Dimitri I. Cherednichenko, Tangali S. Sudarshan

431

Defects in High-Purity Semi-Insulating SiC

Authors: Nguyen Tien Son, Björn Magnusson, Z. Zolnai, Alexsandre Ellison, Erik Janzén

437

Antisites as Possible Origin of Irradiation Induced Photoluminescence Centers in SiC: A Theoretical Study on Clusters of Antisites and Carbon Interstitials in 4H-SiC

Authors: Adam Gali, Peter Deák, E. Rauls, P. Ordejón, F.H.C. Carlsson, Ivan G. Ivanov, Nguyen Tien Son, Erik Janzén, Wolfgang J. Choyke

443

A Theoretical Study of Carbon Clusters in SiC: a Sink and a Source of Carbon Interstitials

Authors: Alexander Mattausch, M. Bockstedte, Oleg Pankratov

449

Density Functional Based Modelling of 30° Partial Dislocations in SiC

Authors: A.T. Blumenau, R. Jones, Sven Öberg, Patrick R. Briddon, Thomas Frauenheim

453

Atomic Computer Simulations of Defect Migration in 3C and 4H-SiC

Authors: Fei Gao, William J. Weber, M. Posselt, V. Belko

457

Optical and EPR Signatures of Intrinsic Defects in Ultra High Purity 4H-SiC

Authors: W.E. Carlos, E.R. Glaser, B.V. Shanabrook

461

EPR and Pulsed ENDOR Study of El6 and Related Defects in 4H-SiC

Authors: T. Umeda, Y. Ishitsuka, Junichi Isoya, Norio Morishita, Takeshi Ohshima, Toshio Kamiya

465