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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460

Materials Science Forum Vols. 457-460

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460

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Table of Contents

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Paper Title Page

Properties and Suitability of 4H-SiC Epitaxial Layers Grown at Different CVD Systems for High Voltage Applications

Authors: Bernd Thomas, Wolfgang Bartsch, René A. Stein, Reinhold Schörner, Dietrich Stephani

181

Selective Growth of 4H-SiC on 4H-SiC Substrates using a High Temperature Mask

Authors: Can Hua Li, Joseph Seiler, I. Bhat, T. Paul Chow

185

Homoepitaxial Growth of 4H-SiC on Trenched Substrates by Chemical Vapor Deposition

Authors: Yi Chen, Tsunenobu Kimoto, Yuuichi Takeuchi, Rajesh Kumar Malhan, Hiroyuki Matsunami

189

Homoepitaxial On-Axis Growth of 4H- and 6H-SiC by CVD

Authors: Christer Hallin, Qamar-ul Wahab, Ivan G. Ivanov, Peder Bergman, Erik Janzén

193

High-Speed Growth of High-Purity Epitaxial Layers with Specular Surface on 4H-SiC(000-1) Face

Authors: Katsunori Danno, Tsunenobu Kimoto, Hiroyuki Matsunami

197

Growth of Device Quality 4H-SiC High Velocity Epitaxy

Authors: Rositza Yakimova, Mikael Syväjärvi, R.R Ciechonski, Qamar-ul Wahab

201

Fast Epitaxial Growth of Thick 4H-SiC with Specular Surface by Chimney-Type Vertical Hot-Wall Chemical Vapor Deposition

Authors: H. Fujiwara, Katsunori Danno, Tsunenobu Kimoto, T. Tojo, Hiroyuki Matsunami

205

4H-SiC Carbon-Face Epitaxial Layers Grown by Low-Pressure Hot-Wall Chemical Vapor Deposition

Authors: Kazutoshi Kojima, Tetsuo Takahashi, Yuuki Ishida, Satoshi Kuroda, Hajime Okumura, Kazuo Arai

209

Influence of C/Si Ratio on the 4H-SiC (0001) Epitaxial Growth and a Keynote for High-Rate Growth

Authors: Yuuki Ishida, Tetsuo Takahashi, Kazutoshi Kojima, Hajime Okumura, Kazuo Arai, Sadafumi Yoshida

213

Comparative Studies of ‹0001› 4H-SiC Layers Grown with either Silane or HexaMethylDiSilane / Propane Precursor Systems

Authors: C. Sartel, Carole Balloud, Véronique Soulière, Sandrine Juillaguet, Jacques Dazord, Yves Monteil, Jean Camassel, S. Rushworth

217

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