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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Comparative Studies of ‹0001› 4H-SiC Layers Grown...

Comparative Studies of ‹0001› 4H-SiC Layers Grown with either Silane or HexaMethylDiSilane / Propane Precursor Systems

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

217-220

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.217

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Online since:

June 2004

Authors:

C. Sartel, Carole Balloud, Véronique Soulière, Sandrine Juillaguet, Jacques Dazord, Yves Monteil, Jean Camassel, S. Rushworth

Keywords:

4H-SiC, Chemical Vapor Deposition (CVD), Growth Rate, HexaMethylDisilane, Operating Windows, Silane

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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DOI: 10.4028/www.scientific.net/msf.389-393.593