Comparative Studies of <0001> 4H-SiC Layers Grown with Either Silane or HexaMethylDisilane / Propane Precursor Systems

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

217-220

DOI:

10.4028/www.scientific.net/MSF.457-460.217

Citation:

C. Sartel et al., "Comparative Studies of <0001> 4H-SiC Layers Grown with Either Silane or HexaMethylDisilane / Propane Precursor Systems", Materials Science Forum, Vols. 457-460, pp. 217-220, 2004

Online since:

June 2004

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$35.00

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