Homoepitaxial Growth of Al-Doped 4H-SiC Using Bis-Trimethylsilylmethane Precursor

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Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

233-236

Citation:

H. K. Song et al., "Homoepitaxial Growth of Al-Doped 4H-SiC Using Bis-Trimethylsilylmethane Precursor", Materials Science Forum, Vols. 457-460, pp. 233-236, 2004

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June 2004

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DOI: https://doi.org/10.1063/1.117613

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