Paper Titles

Comparative Studies of ‹0001› 4H-SiC Layers Grown with either Silane or HexaMethylDiSilane / Propane Precursor Systems
p.217

Growth of Homoepitaxial Films on 4H-SiC(11-20)and 8° Off-Axis 4H-SiC(0001) Substrates and their Characterization
p.221

Uniformity Improvement in SiC Epitaxial Growth by using Si-Condensation
p.225

Growth and Characterization of the 4H-SiC Epilayers on Substrates with Different Off-Cut Directions
p.229

Homoepitaxial Growth of Al-Doped 4H-SiC Using Bis-Trimethylsilylmethane Precursor
p.233

Investigation of <1,1,-2,0> Epitaxial Layers Grown on a-Cut 4H-SiC Substrates
p.237

Vapour-Liquid-Solid Induced Localised Growth of Heavily Al Doped 4H-SiC on Patterned Substrate
p.241

Comparison of Different Metal Additives to Si for the Homoepitaxial Growth of 4H-SiC Layers by Vapour-Liquid-Solid Mechanism
p.245

Simple Model for Calculation of SiC Epitaxial Layers Growth Rate in Vacuum
p.249

HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Homoepitaxial Growth of Al-Doped 4H-SiC Using...

Homoepitaxial Growth of Al-Doped 4H-SiC Using Bis-Trimethylsilylmethane Precursor

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

233-236

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.233

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Online since:

June 2004

Authors:

Ho Keun Song, Myung Yoon Um, Hoon Joo Na, Dae Hwan Kim, In Bok Song, Sang Yong Jung, Jae Kyeong Jeong, Jae Bin Lee, Hyeong Joon Kim

Keywords:

4H-SiC, BTMSM, Chemical Vapor Deposition (CVD), TEA

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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