Comparison of Different Metal Additives to Si for the Homoepitaxial Growth of 4H-SiC Layers by Vapour-Liquid-Solid Mechanism

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Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

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245-248

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F. Abdoun et al., "Comparison of Different Metal Additives to Si for the Homoepitaxial Growth of 4H-SiC Layers by Vapour-Liquid-Solid Mechanism ", Materials Science Forum, Vols. 457-460, pp. 245-248, 2004

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June 2004

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[1] C. Jacquier, G. Ferro, F. Cauwet, J.C. Viala, G. Younes and Y. Monteil, J. Crystal Growth, 254, (2003), p.123.

[2] G. Ferro, D. Chaussende, F. Cauwet, Y. Monteil Mat. Sc. Forum, Vol. 389-393, (2002), p.287.

[3] C. Jacquier; G. Ferro, F. Cauwet, D. Chaussende, Y. Monteil, Crystal Growth & Design 3(3) (2003) p.285.

[4] C. Jacquier, G. Ferro, C. Balloud, M. Zilienski, J. Camassel, E. Polychroniadis; Y. Stoemenos, Y. Monteil, Poster WeP1-4 presented at this conference Growth and characterisation of heavily Al doped 4H-SiC layers grown by VLS in Al-Si melts.

DOI: https://doi.org/10.4028/www.scientific.net/msf.457-460.735

[5] C. Colin, Thesis, Université Claude Bernard Lyon1 (1993).