Paper Titles

Growth and Characterization of the 4H-SiC Epilayers on Substrates with Different Off-Cut Directions
p.229

Homoepitaxial Growth of Al-Doped 4H-SiC Using Bis-Trimethylsilylmethane Precursor
p.233

Investigation of <1,1,-2,0> Epitaxial Layers Grown on a-Cut 4H-SiC Substrates
p.237

Vapour-Liquid-Solid Induced Localised Growth of Heavily Al Doped 4H-SiC on Patterned Substrate
p.241

Comparison of Different Metal Additives to Si for the Homoepitaxial Growth of 4H-SiC Layers by Vapour-Liquid-Solid Mechanism
p.245

Simple Model for Calculation of SiC Epitaxial Layers Growth Rate in Vacuum
p.249

Modelling of SiC-Matrix Composite Formation by Thermal Gradient Chemical Vapour Infiltration
p.253

Pendeo Epitaxial Growth of 3C-SiC on Si Substrates
p.257

Comparative Growth Behavior of 3C-SiC Mesa Heterofilms with and without Extended Defects
p.261

HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Comparison of Different Metal Additives to Si for...

Comparison of Different Metal Additives to Si for the Homoepitaxial Growth of 4H-SiC Layers by Vapour-Liquid-Solid Mechanism

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2003

Info:

Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

245-248

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.245

Citation:

Cite this paper

Online since:

June 2004

Authors:

F. Abdoun, Christophe Jacquier, Gabriel Ferro, François Cauwet, Yves Monteil

Keywords:

Homoepitaxy, Low-Temperature, Metal-Si Melt, VLS

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2004 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] C. Jacquier, G. Ferro, F. Cauwet, J.C. Viala, G. Younes and Y. Monteil, J. Crystal Growth, 254, (2003), p.123.

DOI: 10.1016/s0022-0248(03)01167-9

[2] G. Ferro, D. Chaussende, F. Cauwet, Y. Monteil Mat. Sc. Forum, Vol. 389-393, (2002), p.287.

[3] C. Jacquier; G. Ferro, F. Cauwet, D. Chaussende, Y. Monteil, Crystal Growth & Design 3(3) (2003) p.285.

DOI: 10.1021/cg0256069

[4] C. Jacquier, G. Ferro, C. Balloud, M. Zilienski, J. Camassel, E. Polychroniadis; Y. Stoemenos, Y. Monteil, Poster WeP1-4 presented at this conference Growth and characterisation of heavily Al doped 4H-SiC layers grown by VLS in Al-Si melts.

DOI: 10.4028/www.scientific.net/msf.457-460.735

[5] C. Colin, Thesis, Université Claude Bernard Lyon1 (1993).