Comparison of Different Metal Additives to Si for the Homoepitaxial Growth of 4H-SiC Layers by Vapour-Liquid-Solid Mechanism

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

245-248

DOI:

10.4028/www.scientific.net/MSF.457-460.245

Citation:

F. Abdoun et al., "Comparison of Different Metal Additives to Si for the Homoepitaxial Growth of 4H-SiC Layers by Vapour-Liquid-Solid Mechanism ", Materials Science Forum, Vols. 457-460, pp. 245-248, 2004

Online since:

June 2004

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$35.00

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