Growth and Characterization of the 4H-SiC Epilayers on Substrates with Different Off-Cut Directions

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Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

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229-232

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H. Tsuchida et al., "Growth and Characterization of the 4H-SiC Epilayers on Substrates with Different Off-Cut Directions ", Materials Science Forum, Vols. 457-460, pp. 229-232, 2004

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June 2004

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[8] T. Tawara, H. Tsuchida, S. Izumi, I. Kamata and K. Izumi: this conference. Acknowledgments The authors wish to thank Dr. N. Ohtani of Nippon Steel Corporation for helpful discussions on dislocations in SiC. 0. 01 0. 1 1 1. 41. 21. 00. 80. 60. 40. 20. 0 0. 01 0. 1 1 1. 41. 21. 00. 80. 60. 40. 20. 0 Time [µs] PL Intensity [a. u. ] PL Intensity [a. u. ] Time [µs] (a) 4H-SiC(0001) (b) 4H-SiC(000-1) <11-20> off <1-100> off <11-20> off <1-100> off.

DOI: https://doi.org/10.4028/www.scientific.net/msf.457-460.229

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