Growth and Characterization of the 4H-SiC Epilayers on Substrates with Different Off-Cut Directions

Hidekazu Tsuchida; Isaho Kamata; Syunsuke Izumi; Takeshi Tawara; Kunikaza Izumi

doi:10.4028/www.scientific.net/MSF.457-460.229

Paper Titles

Influence of C/Si Ratio on the 4H-SiC (0001) Epitaxial Growth and a Keynote for High-Rate Growth
p.213

Comparative Studies of ‹0001› 4H-SiC Layers Grown with either Silane or HexaMethylDiSilane / Propane Precursor Systems
p.217

Growth of Homoepitaxial Films on 4H-SiC(11-20)and 8° Off-Axis 4H-SiC(0001) Substrates and their Characterization
p.221

Uniformity Improvement in SiC Epitaxial Growth by using Si-Condensation
p.225

Growth and Characterization of the 4H-SiC Epilayers on Substrates with Different Off-Cut Directions
p.229

Homoepitaxial Growth of Al-Doped 4H-SiC Using Bis-Trimethylsilylmethane Precursor
p.233

Investigation of <1,1,-2,0> Epitaxial Layers Grown on a-Cut 4H-SiC Substrates
p.237

Vapour-Liquid-Solid Induced Localised Growth of Heavily Al Doped 4H-SiC on Patterned Substrate
p.241

Comparison of Different Metal Additives to Si for the Homoepitaxial Growth of 4H-SiC Layers by Vapour-Liquid-Solid Mechanism
p.245

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Growth and Characterization of the 4H-SiC Epilayers on Substrates with Different Off-Cut Directions

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Materials Science Forum (Volumes 457-460)

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229-232

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https://doi.org/10.4028/www.scientific.net/MSF.457-460.229

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Online since:

June 2004

Authors:

Hidekazu Tsuchida, Isaho Kamata, Syunsuke Izumi, Takeshi Tawara, Kunikaza Izumi

Keywords:

Carrier Lifetime, Dislocation, Epitaxial Growth, Off-Cut Direction

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References

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DOI: 10.4028/www.scientific.net/msf.457-460.229

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