Uniformity Improvement in SiC Epitaxial Growth by using Si-Condensation
p.225
p.225
Growth and Characterization of the 4H-SiC Epilayers on Substrates with Different Off-Cut Directions
p.229
p.229
Homoepitaxial Growth of Al-Doped 4H-SiC Using Bis-Trimethylsilylmethane Precursor
p.233
p.233
Investigation of <1,1,-2,0> Epitaxial Layers Grown on a-Cut 4H-SiC Substrates
p.237
p.237
Vapour-Liquid-Solid Induced Localised Growth of Heavily Al Doped 4H-SiC on Patterned Substrate
p.241
p.241
Comparison of Different Metal Additives to Si for the Homoepitaxial Growth of 4H-SiC Layers by Vapour-Liquid-Solid Mechanism
p.245
p.245
Simple Model for Calculation of SiC Epitaxial Layers Growth Rate in Vacuum
p.249
p.249
Modelling of SiC-Matrix Composite Formation by Thermal Gradient Chemical Vapour Infiltration
p.253
p.253
Pendeo Epitaxial Growth of 3C-SiC on Si Substrates
p.257
p.257
Vapour-Liquid-Solid Induced Localised Growth of Heavily Al Doped 4H-SiC on Patterned Substrate
Abstract:
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Periodical:
Materials Science Forum (Volumes 457-460)
Pages:
241-244
Citation:
Online since:
June 2004
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Сopyright:
© 2004 Trans Tech Publications Ltd. All Rights Reserved
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