Simple Model for Calculation of SiC Epitaxial Layers Growth Rate in Vacuum

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

249-252

DOI:

10.4028/www.scientific.net/MSF.457-460.249

Citation:

S. Y. Davydov et al., "Simple Model for Calculation of SiC Epitaxial Layers Growth Rate in Vacuum", Materials Science Forum, Vols. 457-460, pp. 249-252, 2004

Online since:

June 2004

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$35.00

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