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Paper Titles
Homoepitaxial Growth of Al-Doped 4H-SiC Using Bis-Trimethylsilylmethane Precursor
p.233
Investigation of <1,1,-2,0> Epitaxial Layers Grown on a-Cut 4H-SiC Substrates
p.237
Vapour-Liquid-Solid Induced Localised Growth of Heavily Al Doped 4H-SiC on Patterned Substrate
p.241
Comparison of Different Metal Additives to Si for the Homoepitaxial Growth of 4H-SiC Layers by Vapour-Liquid-Solid Mechanism
p.245
Simple Model for Calculation of SiC Epitaxial Layers Growth Rate in Vacuum
p.249
Modelling of SiC-Matrix Composite Formation by Thermal Gradient Chemical Vapour Infiltration
p.253
Pendeo Epitaxial Growth of 3C-SiC on Si Substrates
p.257
Comparative Growth Behavior of 3C-SiC Mesa Heterofilms with and without Extended Defects
p.261
Checker-Board Carbonization for Control and Reduction of the Mean Curvature of 3C-SiC Layers Grown on Si(100) Substrates
p.265

Simple Model for Calculation of SiC Epitaxial Layers Growth Rate in Vacuum

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

249-252

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.249

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Online since:

June 2004

Authors:

Sergey Y. Davydov, N.S. Savkina, Alexander A. Lebedev, Mikael Syväjärvi, Rositza Yakimova

Keywords:

Growth Rate, Silicon Carbide (SiC), Simple Model, Sublimation Epitaxy, Vacuum

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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