Growth of Homoepitaxial Films on 4H-SiC(11-20)and 8° Off-Axis 4H-SiC(0001) Substrates and their Characterization

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

221-224

DOI:

10.4028/www.scientific.net/MSF.457-460.221

Citation:

S.M. Bishop et al., "Growth of Homoepitaxial Films on 4H-SiC(11-20)and 8° Off-Axis 4H-SiC(0001) Substrates and their Characterization ", Materials Science Forum, Vols. 457-460, pp. 221-224, 2004

Online since:

June 2004

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