Paper Titles

Fast Epitaxial Growth of Thick 4H-SiC with Specular Surface by Chimney-Type Vertical Hot-Wall Chemical Vapor Deposition
p.205

4H-SiC Carbon-Face Epitaxial Layers Grown by Low-Pressure Hot-Wall Chemical Vapor Deposition
p.209

Influence of C/Si Ratio on the 4H-SiC (0001) Epitaxial Growth and a Keynote for High-Rate Growth
p.213

Comparative Studies of ‹0001› 4H-SiC Layers Grown with either Silane or HexaMethylDiSilane / Propane Precursor Systems
p.217

Growth of Homoepitaxial Films on 4H-SiC(11-20)and 8° Off-Axis 4H-SiC(0001) Substrates and their Characterization
p.221

Uniformity Improvement in SiC Epitaxial Growth by using Si-Condensation
p.225

Growth and Characterization of the 4H-SiC Epilayers on Substrates with Different Off-Cut Directions
p.229

Homoepitaxial Growth of Al-Doped 4H-SiC Using Bis-Trimethylsilylmethane Precursor
p.233

Investigation of <1,1,-2,0> Epitaxial Layers Grown on a-Cut 4H-SiC Substrates
p.237

HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Growth of Homoepitaxial Films on 4H-SiC(11-20)and...

Growth of Homoepitaxial Films on 4H-SiC(11-20)and 8° Off-Axis 4H-SiC(0001) Substrates and their Characterization

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

221-224

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.221

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Online since:

June 2004

Authors:

S.M. Bishop, Edward A. Preble, Christer Hallin, Anne Henry, L. Storasta, Henrik Jacobsson, B.P. Wagner, Z.J. Reitmeier, Erik Janzén, Robert F. Davis

Keywords:

a-Plane, Carrier Concentration, Etching, Film, Mobility, Photoluminescence (PL), Silicon Carbide (SiC), Wafers, X-Ray Rocking Curve

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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