Growth of Homoepitaxial Films on 4H-SiC(11-20)and 8° Off-Axis 4H-SiC(0001) Substrates and their Characterization

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Materials Science Forum (Volumes 457-460)

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Roland Madar, Jean Camassel and Elisabeth Blanquet

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221-224

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S.M. Bishop et al., "Growth of Homoepitaxial Films on 4H-SiC(11-20)and 8° Off-Axis 4H-SiC(0001) Substrates and their Characterization ", Materials Science Forum, Vols. 457-460, pp. 221-224, 2004

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