4H-SiC Carbon-Face Epitaxial Layers Grown by Low-Pressure Hot-Wall Chemical Vapor Deposition

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Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

209-212

Citation:

K. Kojima et al., "4H-SiC Carbon-Face Epitaxial Layers Grown by Low-Pressure Hot-Wall Chemical Vapor Deposition", Materials Science Forum, Vols. 457-460, pp. 209-212, 2004

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June 2004

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DOI: https://doi.org/10.1063/1.1332102

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