4H-SiC Carbon-Face Epitaxial Layers Grown by Low-Pressure Hot-Wall Chemical Vapor Deposition

Kazutoshi Kojima; Tetsuo Takahashi; Yuuki Ishida; Satoshi Kuroda; Hajime Okumura; Kazuo Arai

doi:10.4028/www.scientific.net/MSF.457-460.209

Paper Titles

Homoepitaxial On-Axis Growth of 4H- and 6H-SiC by CVD
p.193

High-Speed Growth of High-Purity Epitaxial Layers with Specular Surface on 4H-SiC(000-1) Face
p.197

Growth of Device Quality 4H-SiC High Velocity Epitaxy
p.201

Fast Epitaxial Growth of Thick 4H-SiC with Specular Surface by Chimney-Type Vertical Hot-Wall Chemical Vapor Deposition
p.205

4H-SiC Carbon-Face Epitaxial Layers Grown by Low-Pressure Hot-Wall Chemical Vapor Deposition
p.209

Influence of C/Si Ratio on the 4H-SiC (0001) Epitaxial Growth and a Keynote for High-Rate Growth
p.213

Comparative Studies of ‹0001› 4H-SiC Layers Grown with either Silane or HexaMethylDiSilane / Propane Precursor Systems
p.217

Growth of Homoepitaxial Films on 4H-SiC(11-20)and 8° Off-Axis 4H-SiC(0001) Substrates and their Characterization
p.221

Uniformity Improvement in SiC Epitaxial Growth by using Si-Condensation
p.225

HomeMaterials Science ForumMaterials Science Forum Vols. 457-4604H-SiC Carbon-Face Epitaxial Layers Grown by...

4H-SiC Carbon-Face Epitaxial Layers Grown by Low-Pressure Hot-Wall Chemical Vapor Deposition

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2003

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

209-212

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.209

Citation:

Cite this paper

Online since:

June 2004

Authors:

Kazutoshi Kojima, Tetsuo Takahashi, Yuuki Ishida, Satoshi Kuroda, Hajime Okumura, Kazuo Arai

Keywords:

4H-SiC, Buffer Layer, Carbon-Face, Epitaxial Growth, Morpholoy, Residual Donor, Site-Competition

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] A. Gölz, G. Horstman, E. Stain von Kaminenski and H. Kurz: Phys. Conf. Ser. Vol. 142 (1996), p.633.

Google Scholar

[2] T. Kimoto, A. Itoh and H. Matsunami: Phys. Stat. Sol. (b) Vol. 202 (1997), p.247.

Google Scholar

[3] K. Fukuda, W. J. Cho, S. Suzuki, J. Senzaki, T. Tanaka and K. Arai: Appl. Phys. Lett. Vol. 77 (2000), p.866.

Google Scholar

[4] K. Fukuda, J. Senzaki, K. Kojima and T. Suzuki: Mat. Sci. Forum Vol. 433-436 (2003), p.567.

Google Scholar

[5] T. Kimoto, A. Itoh and H. Matsunami: Appl. Phys. Lett. Vol. 67 (1995), p.2385.

Google Scholar

[6] S. Nakamura, T. Kimoto and H. Matsunami: Jpn. J. Appl. Phys. Vol. 42 (2003), p. L846.

Google Scholar

[7] J. Pernot, S. Contreras, J. Camassel, J. L. Robert, W. Zawadzki, E. Neyret and L. Di Cioccio: Appl. Phys. Lett. Vol. 77 (2000), p.4359.

DOI: 10.1063/1.1332102

Google Scholar

[8] T. Kimoto, S. Nakazawa, K. Hashimoto and H. Matsunami: Appl. Phys. Lett Vol. 79 (2001), p.2761.

Google Scholar