4H-SiC Carbon-Face Epitaxial Layers Grown by Low-Pressure Hot-Wall Chemical Vapor Deposition

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

209-212

DOI:

10.4028/www.scientific.net/MSF.457-460.209

Citation:

K. Kojima et al., "4H-SiC Carbon-Face Epitaxial Layers Grown by Low-Pressure Hot-Wall Chemical Vapor Deposition", Materials Science Forum, Vols. 457-460, pp. 209-212, 2004

Online since:

June 2004

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$35.00

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