High-Speed Growth of High-Purity Epitaxial Layers with Specular Surface on 4H-SiC(000-1) Face

Katsunori Danno; Tsunenobu Kimoto; Hiroyuki Matsunami

doi:10.4028/www.scientific.net/MSF.457-460.197

Paper Titles

Properties and Suitability of 4H-SiC Epitaxial Layers Grown at Different CVD Systems for High Voltage Applications
p.181

Selective Growth of 4H-SiC on 4H-SiC Substrates using a High Temperature Mask
p.185

Homoepitaxial Growth of 4H-SiC on Trenched Substrates by Chemical Vapor Deposition
p.189

Homoepitaxial On-Axis Growth of 4H- and 6H-SiC by CVD
p.193

High-Speed Growth of High-Purity Epitaxial Layers with Specular Surface on 4H-SiC(000-1) Face
p.197

Growth of Device Quality 4H-SiC High Velocity Epitaxy
p.201

Fast Epitaxial Growth of Thick 4H-SiC with Specular Surface by Chimney-Type Vertical Hot-Wall Chemical Vapor Deposition
p.205

4H-SiC Carbon-Face Epitaxial Layers Grown by Low-Pressure Hot-Wall Chemical Vapor Deposition
p.209

Influence of C/Si Ratio on the 4H-SiC (0001) Epitaxial Growth and a Keynote for High-Rate Growth
p.213

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High-Speed Growth of High-Purity Epitaxial Layers with Specular Surface on 4H-SiC(000-1) Face

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Materials Science Forum (Volumes 457-460)

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197-200

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.197

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Online since:

June 2004

Authors:

Katsunori Danno, Tsunenobu Kimoto, Hiroyuki Matsunami

Keywords:

4H-SiC(000-1) Face, Chemical Vapor Deposition (CVD), Deep Level, Micropipe

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