Homoepitaxial Growth of 4H-SiC on Trenched Substrates by Chemical Vapor Deposition

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

189-192

DOI:

10.4028/www.scientific.net/MSF.457-460.189

Citation:

Y. Chen et al., "Homoepitaxial Growth of 4H-SiC on Trenched Substrates by Chemical Vapor Deposition", Materials Science Forum, Vols. 457-460, pp. 189-192, 2004

Online since:

June 2004

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$35.00

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