Homoepitaxial Growth of 4H-SiC on Trenched Substrates by Chemical Vapor Deposition

Yi Chen; Tsunenobu Kimoto; Yuuichi Takeuchi; Rajesh Kumar Malhan; Hiroyuki Matsunami

doi:10.4028/www.scientific.net/MSF.457-460.189

Paper Titles

Step Free Surface Heteroepitaxy of 3C-SiC Layers on Patterned 4H/6H-SiC Mesas and Cantilevers
p.169

Flash Lamp Supported Deposition of 3C-SiC (FLASiC) – a Promising Technique to Produce High Quality Cubic SiC Layers
p.175

Properties and Suitability of 4H-SiC Epitaxial Layers Grown at Different CVD Systems for High Voltage Applications
p.181

Selective Growth of 4H-SiC on 4H-SiC Substrates using a High Temperature Mask
p.185

Homoepitaxial Growth of 4H-SiC on Trenched Substrates by Chemical Vapor Deposition
p.189

Homoepitaxial On-Axis Growth of 4H- and 6H-SiC by CVD
p.193

High-Speed Growth of High-Purity Epitaxial Layers with Specular Surface on 4H-SiC(000-1) Face
p.197

Growth of Device Quality 4H-SiC High Velocity Epitaxy
p.201

Fast Epitaxial Growth of Thick 4H-SiC with Specular Surface by Chimney-Type Vertical Hot-Wall Chemical Vapor Deposition
p.205

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Homoepitaxial Growth of 4H-SiC on Trenched Substrates by Chemical Vapor Deposition

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

189-192

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.189

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Online since:

June 2004

Authors:

Yi Chen, Tsunenobu Kimoto, Yuuichi Takeuchi, Rajesh Kumar Malhan, Hiroyuki Matsunami

Keywords:

4H-SiC, Chemical Vapor Deposition (CVD), Homoepitaxial Growth, Trenched Substrate

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References

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