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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Step Free Surface Heteroepitaxy of 3C-SiC Layers...

Step Free Surface Heteroepitaxy of 3C-SiC Layers on Patterned 4H/6H-SiC Mesas and Cantilevers

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

169-174

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.169

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Online since:

June 2004

Authors:

Philip G. Neudeck, J. Anthony Powell, Andrew J. Trunek, David J. Spry

Keywords:

3C-SiC, Cantilever, Chemical Vapor Deposition (CVD), Dislocation, Epitaxial Growth, Etch Pit, Heteroepitaxy, KOH, Mesa, On-Axis Epitaxy, Screw Dislocations, Step-Free Surface, Web Growth

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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