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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Properties and Suitability of 4H-SiC Epitaxial...

Properties and Suitability of 4H-SiC Epitaxial Layers Grown at Different CVD Systems for High Voltage Applications

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

181-184

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.181

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Online since:

June 2004

Authors:

Bernd Thomas, Wolfgang Bartsch, René A. Stein, Reinhold Schörner, Dietrich Stephani

Keywords:

Cold-Wall CVD, Epitaxial Layer, Hot-Wall CVD, PiN Diode, Silicon Carbide (SiC)

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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DOI: 10.1109/16.992876

[3] P. Friedrichs, H. Mitlehner, R. Schoerner, K.O. Dohnke, R. Elpelt, D. Stephani, Proc. EPE 2001, Graz, Austria, CD publication ISBN: 90-75815-06-9.

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[5] [20] [40] [60] [80] [95] Cold Wall Hot Wall log IF @ 1. 5V cumulative percentage -10 -8 -6 -4.

[5] [20] [40] [60] [80] [95] Cold Wall Hot Wall log IR @ -500 V cumulative percentage.