Properties and Suitability of 4H-SiC Epitaxial Layers Grown at Different CVD Systems for High Voltage Applications

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

181-184

Citation:

B. Thomas et al., "Properties and Suitability of 4H-SiC Epitaxial Layers Grown at Different CVD Systems for High Voltage Applications", Materials Science Forum, Vols. 457-460, pp. 181-184, 2004

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June 2004

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DOI: https://doi.org/10.1109/16.992876

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[5] [20] [40] [60] [80] [95] Cold Wall Hot Wall log IF @ 1. 5V cumulative percentage -10 -8 -6 -4.

[5] [20] [40] [60] [80] [95] Cold Wall Hot Wall log IR @ -500 V cumulative percentage.