Surface Mechanisms in Homoepitaxial Growth on α-SiC{0001}-Vicinal Faces

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

163-168

DOI:

10.4028/www.scientific.net/MSF.457-460.163

Citation:

S. Nakamura et al., "Surface Mechanisms in Homoepitaxial Growth on α-SiC{0001}-Vicinal Faces", Materials Science Forum, Vols. 457-460, pp. 163-168, 2004

Online since:

June 2004

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$35.00

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