Stable Parameter Range for 3C-SiC Sublimation Growth on Graphite

Jürgen Wollweber; Alkyoni Mantzari; Efstathios K. Polychroniadis; Carole Balloud; A. Freudenberg; R. Nitschke; Jean Camassel

doi:10.4028/www.scientific.net/MSF.457-460.143

Paper Titles

The Effect of a Periodic Movement on the Die of the Bottom Line of the Melt/Gas Meniscus in the Case of Silicon Filaments Grown from the Melt in a Vacuum by Edge-Defined Film-Fed Growth Method
p.127

Continuous Growth of SiC Single Crystal by the Spray Dried Powder Made of Ultra-Fine Particle Precursors
p.131

Comparison between Various Chemical Systems for the CVD Step in the CF-PVT Crystal Growth Method
p.135

In Situ SiC Feeding by Chemical Vapor Deposition for Bulk Growth
p.139

Stable Parameter Range for 3C-SiC Sublimation Growth on Graphite
p.143

Microstructure of Cubic SiC Grown by the Modified Lely-Method
p.147

Growth of 3C-SiC Bulk Material by the Modified Lely Method
p.151

Characterization of SiC Epitaxial Structures using High-Resolution X-Ray Diffraction Techniques
p.157

Surface Mechanisms in Homoepitaxial Growth on α-SiC{0001}-Vicinal Faces
p.163

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Stable Parameter Range for 3C-SiC Sublimation Growth on Graphite

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Silicon Carbide and Related Materials 2003

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Materials Science Forum (Volumes 457-460)

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143-146

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.143

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Online since:

June 2004

Authors:

Jürgen Wollweber, Alkyoni Mantzari, Efstathios K. Polychroniadis, Carole Balloud, A. Freudenberg, R. Nitschke, Jean Camassel

Keywords:

3C-SiC, Bulk Growth, Lely, Raman Spectroscopy, Stacking Fault, Sublimation

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References

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