Paper Titles

High Quality SiC Bulk Growth by Sublimation Method using Elemental Silicon and Carbon Powder as SiC Source Materials
p.115

Flux Growth of SiC Crystals from Eutectic Melt SiC-B₄C
p.119

Solution Growth of Self-Standing 6H-SiC Single Crystal Using Metal Solvent
p.123

The Effect of a Periodic Movement on the Die of the Bottom Line of the Melt/Gas Meniscus in the Case of Silicon Filaments Grown from the Melt in a Vacuum by Edge-Defined Film-Fed Growth Method
p.127

Continuous Growth of SiC Single Crystal by the Spray Dried Powder Made of Ultra-Fine Particle Precursors
p.131

Comparison between Various Chemical Systems for the CVD Step in the CF-PVT Crystal Growth Method
p.135

In Situ SiC Feeding by Chemical Vapor Deposition for Bulk Growth
p.139

Stable Parameter Range for 3C-SiC Sublimation Growth on Graphite
p.143

Microstructure of Cubic SiC Grown by the Modified Lely-Method
p.147

HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Continuous Growth of SiC Single Crystal by the...

Continuous Growth of SiC Single Crystal by the Spray Dried Powder Made of Ultra-Fine Particle Precursors

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2003

Info:

Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

131-134

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.131

Citation:

Cite this paper

Online since:

June 2004

Authors:

Yoshimitsu Yamada, Shin Ichi Nishizawa, Shinichi Nakashima, Kazuo Arai

Keywords:

Carbothermal Reduction, Crystal Growth, Precursor, Silicon Carbide (SiC), Single Crystal, Spray Dried, Ultra-Fine Particles

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2004 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] Y. Yamada and K. Sagawa : Mater. Sci. Forum Vol. 389-393 (2002), pp.159-162.

[2] Y. Yamada , K. Sagawa and S. Nakashima : Mater. Sci. Forum Vol. 433-436 (2003), pp.79-82.