The Effect of a Periodic Movement on the Die of the Bottom Line of the Melt/Gas Meniscus in the Case of Silicon Filaments Grown from the Melt in a Vacuum by Edge-Defined Film-Fed Growth Method

L. Braescu; A.M. Balint; St. Balint

doi:10.4028/www.scientific.net/MSF.457-460.127

Paper Titles

Natural Crystal Habit and Preferential Growth Directions during PVT of Silicon Carbide
p.111

High Quality SiC Bulk Growth by Sublimation Method using Elemental Silicon and Carbon Powder as SiC Source Materials
p.115

Flux Growth of SiC Crystals from Eutectic Melt SiC-B₄C
p.119

Solution Growth of Self-Standing 6H-SiC Single Crystal Using Metal Solvent
p.123

The Effect of a Periodic Movement on the Die of the Bottom Line of the Melt/Gas Meniscus in the Case of Silicon Filaments Grown from the Melt in a Vacuum by Edge-Defined Film-Fed Growth Method
p.127

Continuous Growth of SiC Single Crystal by the Spray Dried Powder Made of Ultra-Fine Particle Precursors
p.131

Comparison between Various Chemical Systems for the CVD Step in the CF-PVT Crystal Growth Method
p.135

In Situ SiC Feeding by Chemical Vapor Deposition for Bulk Growth
p.139

Stable Parameter Range for 3C-SiC Sublimation Growth on Graphite
p.143

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The Effect of a Periodic Movement on the Die of the Bottom Line of the Melt/Gas Meniscus in the Case of Silicon Filaments Grown from the Melt in a Vacuum by Edge-Defined Film-Fed Growth Method

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Silicon Carbide and Related Materials 2003

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Materials Science Forum (Volumes 457-460)

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127-130

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https://doi.org/10.4028/www.scientific.net/MSF.457-460.127

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Online since:

June 2004

Authors:

L. Braescu, A.M. Balint, St. Balint

Keywords:

A1 Control, A1 Filament, A1 Radius, A2 E.F.G. Method

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References

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