Flux Growth of SiC Crystals from Eutectic Melt SiC-B4C

Boris M. Epelbaum; P.A. Gurzhiyants; Z.G. Herro; Matthias Bickermann; Albrecht Winnacker

doi:10.4028/www.scientific.net/MSF.457-460.119

Paper Titles

Effect of Crucible Design on the Shape and the Quality in 6H-SiC Crystals Grown by Physical Vapor Transport
p.103

Sublimation Growth of SiC Crystal Using Modified Crucible Design on 4H-SiC {03-38} Substrate and Defect Analysis
p.107

Natural Crystal Habit and Preferential Growth Directions during PVT of Silicon Carbide
p.111

High Quality SiC Bulk Growth by Sublimation Method using Elemental Silicon and Carbon Powder as SiC Source Materials
p.115

Flux Growth of SiC Crystals from Eutectic Melt SiC-B₄C
p.119

Solution Growth of Self-Standing 6H-SiC Single Crystal Using Metal Solvent
p.123

The Effect of a Periodic Movement on the Die of the Bottom Line of the Melt/Gas Meniscus in the Case of Silicon Filaments Grown from the Melt in a Vacuum by Edge-Defined Film-Fed Growth Method
p.127

Continuous Growth of SiC Single Crystal by the Spray Dried Powder Made of Ultra-Fine Particle Precursors
p.131

Comparison between Various Chemical Systems for the CVD Step in the CF-PVT Crystal Growth Method
p.135

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Flux Growth of SiC Crystals from Eutectic Melt SiC-B₄C

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Silicon Carbide and Related Materials 2003

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Materials Science Forum (Volumes 457-460)

Pages:

119-122

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.119

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Online since:

June 2004

Authors:

Boris M. Epelbaum, P.A. Gurzhiyants, Z.G. Herro, Matthias Bickermann, Albrecht Winnacker

Keywords:

Boron Carbide, Eutectic, Flux, High Temperature Solution, SiC Crystal Growth

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