Effect of Crucible Design on the Shape and the Quality in 6H-SiC Crystals Grown by Physical Vapor Transport

Myung Yoon Um; Ho Keun  Song; Hoon Joo Na; Dae Hwan Kim; In Bok Song; Sang Yong Jung; Jae Kyeong Jeong; Jae Bin Lee; Hyeong Joon Kim

doi:10.4028/www.scientific.net/MSF.457-460.103

Paper Titles

Growth of Bulk SiC by Halide Chemical Vapor Deposition
p.87

Characterization of Thick 2-Inch 4H-SiC Layers Grown by the Continuous Feed-Physical Vapor Transport Method
p.91

Effect of Thermal Field on Interface Step Structures during PVT Growth of (0001)Si 6H-SiC
p.95

Large Diameter and Long Length Growth of SiC Single Crystal
p.99

Effect of Crucible Design on the Shape and the Quality in 6H-SiC Crystals Grown by Physical Vapor Transport
p.103

Sublimation Growth of SiC Crystal Using Modified Crucible Design on 4H-SiC {03-38} Substrate and Defect Analysis
p.107

Natural Crystal Habit and Preferential Growth Directions during PVT of Silicon Carbide
p.111

High Quality SiC Bulk Growth by Sublimation Method using Elemental Silicon and Carbon Powder as SiC Source Materials
p.115

Flux Growth of SiC Crystals from Eutectic Melt SiC-B₄C
p.119

HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Effect of Crucible Design on the Shape and the...

Effect of Crucible Design on the Shape and the Quality in 6H-SiC Crystals Grown by Physical Vapor Transport

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Silicon Carbide and Related Materials 2003

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Materials Science Forum (Volumes 457-460)

Pages:

103-106

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.103

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Online since:

June 2004

Authors:

Myung Yoon Um, Ho Keun Song, Hoon Joo Na, Dae Hwan Kim, In Bok Song, Sang Yong Jung, Jae Kyeong Jeong, Jae Bin Lee, Hyeong Joon Kim

Keywords:

6H-SiC Crystal, Crucible, Physical Vapor Transport

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