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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Large Diameter and Long Length Growth of SiC...

Large Diameter and Long Length Growth of SiC Single Crystal

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

99-102

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.99

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Online since:

June 2004

Authors:

Tomohisa Kato, Takaya Ohno, Fusao Hirose, Naoki Oyanagi, Shin Ichi Nishizawa, Kazuo Arai

Keywords:

Defect, Dislocation, Silicon Carbide (SiC), Single Crystal, Sublimation Growth, X-Ray Topography

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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