Growth and Characterization of SiC Bulk Crystals Grown on an Off-Oriented (11-20) Seed Crystal

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Materials Science Forum (Volumes 457-460)

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83-86

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June 2004

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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[1] J. Takahashi, M. Kanaya and Y. Fujiwara: J. Cryst. Growth Vol. 135 (1994), p.61.

Google Scholar

[2] J. Takahashi, N. Ohtani and M. Kanaya: J. Cryst. Growth Vol. 167 (1996), p.596.

Google Scholar

[3] H. Yano, T. Hirao, T. Kimoto, H. Matsunami, K. Asano and Y. Sugawara: Mater. Sci. Forum Vol. 338-342 (2000), p.1105.

DOI: 10.4028/www.scientific.net/msf.338-342.1105

Google Scholar

[4] J. Senzaki, K. Fukuda, K. Kojima, S. Harada, R. Kosugi, S. Suzuki, T. Suzuki and K. Arai: Mater. Sci. Forum Vol. 389-393 (2002), p.1061.

DOI: 10.4028/www.scientific.net/msf.389-393.1061

Google Scholar

[5] K. Kojima, T. Ohno, T. Fujimoto, M. Katsuno, N. Ohtani, J. Nishio, T. Suzuki, T. Tanaka, Y. Ishida, T. Takahashi and K. Arai: Appl. Phys. Lett. Vol. 81 (2002), p.2974.

DOI: 10.1063/1.1512956

Google Scholar

[6] J. Takahashi, N. Ohtani, M. Katsuno and S. Shinoyama: J. Cryst. Growth Vol. 181 (1997), p.229 Fig. 3 (01 1, - 0) and (10 1, - 0) microfacet formation on the SiC (11 2, - 0) growing surface during growth.

Google Scholar