[1]
J. Takahashi, M. Kanaya and Y. Fujiwara: J. Cryst. Growth Vol. 135 (1994), p.61.
Google Scholar
[2]
J. Takahashi, N. Ohtani and M. Kanaya: J. Cryst. Growth Vol. 167 (1996), p.596.
Google Scholar
[3]
H. Yano, T. Hirao, T. Kimoto, H. Matsunami, K. Asano and Y. Sugawara: Mater. Sci. Forum Vol. 338-342 (2000), p.1105.
DOI: 10.4028/www.scientific.net/msf.338-342.1105
Google Scholar
[4]
J. Senzaki, K. Fukuda, K. Kojima, S. Harada, R. Kosugi, S. Suzuki, T. Suzuki and K. Arai: Mater. Sci. Forum Vol. 389-393 (2002), p.1061.
DOI: 10.4028/www.scientific.net/msf.389-393.1061
Google Scholar
[5]
K. Kojima, T. Ohno, T. Fujimoto, M. Katsuno, N. Ohtani, J. Nishio, T. Suzuki, T. Tanaka, Y. Ishida, T. Takahashi and K. Arai: Appl. Phys. Lett. Vol. 81 (2002), p.2974.
DOI: 10.1063/1.1512956
Google Scholar
[6]
J. Takahashi, N. Ohtani, M. Katsuno and S. Shinoyama: J. Cryst. Growth Vol. 181 (1997), p.229 Fig. 3 (01 1, - 0) and (10 1, - 0) microfacet formation on the SiC (11 2, - 0) growing surface during growth.
Google Scholar