Paper Titles

Thermodynamic Analysis of the Production of Silicon Carbide via Silicon Dioxide and Carbon
p.59

Faceted Growth of SiC Bulk Crystals
p.63

Theoretical Analysis of the Mass Transport in the Powder Charge in Long-Term Bulk SiC Growth
p.67

Free Growth of 4H-SiC by Sublimation Method
p.71

Advanced PVT Growth of 2 & 3-Inch Diameter 6H SiC Crystals
p.75

Radial Expansion Growth of SiC Single Crystals with Higher Crystal Quality
p.79

Growth and Characterization of SiC Bulk Crystals Grown on an Off-Oriented (11-20) Seed Crystal
p.83

Growth of Bulk SiC by Halide Chemical Vapor Deposition
p.87

Characterization of Thick 2-Inch 4H-SiC Layers Grown by the Continuous Feed-Physical Vapor Transport Method
p.91

HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Advanced PVT Growth of 2 & 3-Inch Diameter 6H SiC...

Advanced PVT Growth of 2 & 3-Inch Diameter 6H SiC Crystals

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2003

Info:

Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

75-78

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.75

Citation:

Cite this paper

Online since:

June 2004

Authors:

Thomas Anderson, Donovan L. Barrett, J. Chen, W.T. Elkington, Ejiro Emorhokpor, A. Gupta, C.J. Johnson, R.H. Hopkins, Charles Martin, Thomas Kerr, E. Semenas, Andrew E. Souzis, C.D. Tanner, Murugesu Yoganathan, Ilya Zwieback

Keywords:

EPR, Micropipe, Native Defects, PL, Resistivity, Semi-insulating (SI), Silicon Carbide (SiC), Sublimation Growth

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2004 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: