Advanced PVT Growth of 2 & 3-Inch Diameter 6H SiC Crystals
p.75
p.75
Radial Expansion Growth of SiC Single Crystals with Higher Crystal Quality
p.79
p.79
Growth and Characterization of SiC Bulk Crystals Grown on an Off-Oriented (11-20) Seed Crystal
p.83
p.83
Growth of Bulk SiC by Halide Chemical Vapor Deposition
p.87
p.87
Characterization of Thick 2-Inch 4H-SiC Layers Grown by the Continuous Feed-Physical Vapor Transport Method
p.91
p.91
Effect of Thermal Field on Interface Step Structures during PVT Growth of (0001)Si 6H-SiC
p.95
p.95
Large Diameter and Long Length Growth of SiC Single Crystal
p.99
p.99
Effect of Crucible Design on the Shape and the Quality in 6H-SiC Crystals Grown by Physical Vapor Transport
p.103
p.103
Sublimation Growth of SiC Crystal Using Modified Crucible Design on 4H-SiC {03-38} Substrate and Defect Analysis
p.107
p.107
Characterization of Thick 2-Inch 4H-SiC Layers Grown by the Continuous Feed-Physical Vapor Transport Method
Abstract:
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Periodical:
Materials Science Forum (Volumes 457-460)
Pages:
91-94
Citation:
Online since:
June 2004
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Сopyright:
© 2004 Trans Tech Publications Ltd. All Rights Reserved
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