Characterization of Thick 2-Inch 4H-SiC Layers Grown by the Continuous Feed-Physical Vapor Transport Method

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

91-94

DOI:

10.4028/www.scientific.net/MSF.457-460.91

Citation:

D. Chaussende et al., "Characterization of Thick 2-Inch 4H-SiC Layers Grown by the Continuous Feed-Physical Vapor Transport Method", Materials Science Forum, Vols. 457-460, pp. 91-94, 2004

Online since:

June 2004

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$35.00

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