Effect of Thermal Field on Interface Step Structures during PVT Growth of (0001)Si 6H-SiC

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

95-98

DOI:

10.4028/www.scientific.net/MSF.457-460.95

Citation:

Z.G. Herro et al., "Effect of Thermal Field on Interface Step Structures during PVT Growth of (0001)Si 6H-SiC ", Materials Science Forum, Vols. 457-460, pp. 95-98, 2004

Online since:

June 2004

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$35.00

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