Effect of Thermal Field on Interface Step Structures during PVT Growth of (0001)Si 6H-SiC
p.95
p.95
Large Diameter and Long Length Growth of SiC Single Crystal
p.99
p.99
Effect of Crucible Design on the Shape and the Quality in 6H-SiC Crystals Grown by Physical Vapor Transport
p.103
p.103
Sublimation Growth of SiC Crystal Using Modified Crucible Design on 4H-SiC {03-38} Substrate and Defect Analysis
p.107
p.107
Natural Crystal Habit and Preferential Growth Directions during PVT of Silicon Carbide
p.111
p.111
High Quality SiC Bulk Growth by Sublimation Method using Elemental Silicon and Carbon Powder as SiC Source Materials
p.115
p.115
Flux Growth of SiC Crystals from Eutectic Melt SiC-B4C
p.119
p.119
Solution Growth of Self-Standing 6H-SiC Single Crystal Using Metal Solvent
p.123
p.123
The Effect of a Periodic Movement on the Die of the Bottom Line of the Melt/Gas Meniscus in the Case of Silicon Filaments Grown from the Melt in a Vacuum by Edge-Defined Film-Fed Growth Method
p.127
p.127
Natural Crystal Habit and Preferential Growth Directions during PVT of Silicon Carbide
Abstract:
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Periodical:
Materials Science Forum (Volumes 457-460)
Pages:
111-114
Citation:
Online since:
June 2004
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© 2004 Trans Tech Publications Ltd. All Rights Reserved
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