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Large Diameter and Long Length Growth of SiC Single Crystal
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Effect of Crucible Design on the Shape and the Quality in 6H-SiC Crystals Grown by Physical Vapor Transport
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Sublimation Growth of SiC Crystal Using Modified Crucible Design on 4H-SiC {03-38} Substrate and Defect Analysis
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Natural Crystal Habit and Preferential Growth Directions during PVT of Silicon Carbide
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High Quality SiC Bulk Growth by Sublimation Method using Elemental Silicon and Carbon Powder as SiC Source Materials
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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Sublimation Growth of SiC Crystal Using Modified...

Sublimation Growth of SiC Crystal Using Modified Crucible Design on 4H-SiC {03-38} Substrate and Defect Analysis

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

107-110

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.107

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Online since:

June 2004

Authors:

Tomoaki Furusho, H. Takagi, S. Ota, Hiromu Shiomi, Shigehiro Nishino

Keywords:

4H-SiC {03-38}, Micropipe, Stacking Fault, Sublimation Growth

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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