Sublimation Growth of SiC Crystal Using Modified Crucible Design on 4H-SiC {03-38} Substrate and Defect Analysis

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

107-110

DOI:

10.4028/www.scientific.net/MSF.457-460.107

Citation:

T. Furusho et al., "Sublimation Growth of SiC Crystal Using Modified Crucible Design on 4H-SiC {03-38} Substrate and Defect Analysis", Materials Science Forum, Vols. 457-460, pp. 107-110, 2004

Online since:

June 2004

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$35.00

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