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Free Growth of 4H-SiC by Sublimation Method
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Advanced PVT Growth of 2 & 3-Inch Diameter 6H SiC Crystals
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Radial Expansion Growth of SiC Single Crystals with Higher Crystal Quality
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Growth and Characterization of SiC Bulk Crystals Grown on an Off-Oriented (11-20) Seed Crystal
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Growth of Bulk SiC by Halide Chemical Vapor Deposition
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Characterization of Thick 2-Inch 4H-SiC Layers Grown by the Continuous Feed-Physical Vapor Transport Method
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Effect of Thermal Field on Interface Step Structures during PVT Growth of (0001)Si 6H-SiC
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Large Diameter and Long Length Growth of SiC Single Crystal
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Effect of Crucible Design on the Shape and the Quality in 6H-SiC Crystals Grown by Physical Vapor Transport
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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Growth of Bulk SiC by Halide Chemical Vapor...

Growth of Bulk SiC by Halide Chemical Vapor Deposition

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

87-90

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.87

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Online since:

June 2004

Authors:

M. Fanton, Marek Skowronski, David Snyder, Hun Jae Chung, Saurav Nigam, B. Weiland, Sung Wook Huh

Keywords:

Chemical Vapor Deposition (CVD), Growth Rate, Halide, High Purity, Semi-insulating (SI)

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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