Comparison between Various Chemical Systems for the CVD Step in the CF-PVT Crystal Growth Method

Laurent Auvray; Didier Chaussende; Francis Baillet; Ludovic Charpentier; Michel Pons; Roland Madar

doi:10.4028/www.scientific.net/MSF.457-460.135

Paper Titles

Flux Growth of SiC Crystals from Eutectic Melt SiC-B₄C
p.119

Solution Growth of Self-Standing 6H-SiC Single Crystal Using Metal Solvent
p.123

The Effect of a Periodic Movement on the Die of the Bottom Line of the Melt/Gas Meniscus in the Case of Silicon Filaments Grown from the Melt in a Vacuum by Edge-Defined Film-Fed Growth Method
p.127

Continuous Growth of SiC Single Crystal by the Spray Dried Powder Made of Ultra-Fine Particle Precursors
p.131

Comparison between Various Chemical Systems for the CVD Step in the CF-PVT Crystal Growth Method
p.135

In Situ SiC Feeding by Chemical Vapor Deposition for Bulk Growth
p.139

Stable Parameter Range for 3C-SiC Sublimation Growth on Graphite
p.143

Microstructure of Cubic SiC Grown by the Modified Lely-Method
p.147

Growth of 3C-SiC Bulk Material by the Modified Lely Method
p.151

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Comparison between Various Chemical Systems for the CVD Step in the CF-PVT Crystal Growth Method

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Silicon Carbide and Related Materials 2003

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Materials Science Forum (Volumes 457-460)

Pages:

135-138

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.135

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Online since:

June 2004

Authors:

Laurent Auvray, Didier Chaussende, Francis Baillet, Ludovic Charpentier, Michel Pons, Roland Madar

Keywords:

Bulk Growth, HTCVD, PVT

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References

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DOI: 10.1149/1.1606689

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