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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460In Situ SiC Feeding by Chemical Vapor Deposition...

In Situ SiC Feeding by Chemical Vapor Deposition for Bulk Growth

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

139-142

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.139

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Online since:

June 2004

Authors:

Ludovic Charpentier, Francis Baillet, Didier Chaussende, Laurent Auvray, Michel Pons, Etienne Pernot, Roland Madar

Keywords:

Bulk, Chemical Vapor Deposition (CVD), Physical Vapor Transport, Silicon Carbide (SiC), Simulation

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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[1] D. Chaussende, F. Baillet, L. Charpentier, E. Pernot, M. Pons, R. Madar: to be published in J. Electrochem. Soc. 150 (2003).

DOI: 10.1149/1.1606689

[2] L. Charpentier, F. Baillet, D. Chaussende, E. Pernot, M. Pons, R. Madar : Mat. Sci. Forum, Vols 433- 436 (2003), p.87.

DOI: 10.4028/www.scientific.net/msf.433-436.103

[3] G.L. Vignoles, C. Descamps, N. Reuge : J. Phys. IV, 10 (2000) p.9.

[4] C.R. Kleijn, J. Electrochem. Soc.: 138 (1991) p.2190.

[5] CFD Research Corporation, 215 Wynn Drive, Huntsville, Alabama, 35805.

[6] F. Baillet, D. Chaussende, L. Charpentier, E. Pernot, M. Pons, R. Madar : Mat. Sci. Forum, Vols 433- 436 (2003), p.103.

DOI: 10.4028/www.scientific.net/msf.433-436.103

[7] D. Chaussende et al., this conference. 0 0, 05 0, 1 0, 15 0, 2 0, 25 0, 3 0, 35 0, 4 0, 45 0 5 10 15 20 25 30 Distance from CVD area (mm) SiC deposition rate (g/h) a b c.