In Situ SiC Feeding by Chemical Vapor Deposition for Bulk Growth

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

139-142

Citation:

L. Charpentier et al., "In Situ SiC Feeding by Chemical Vapor Deposition for Bulk Growth", Materials Science Forum, Vols. 457-460, pp. 139-142, 2004

Online since:

June 2004

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DOI: https://doi.org/10.1149/1.1606689

[2] L. Charpentier, F. Baillet, D. Chaussende, E. Pernot, M. Pons, R. Madar : Mat. Sci. Forum, Vols 433- 436 (2003), p.87.

DOI: https://doi.org/10.4028/www.scientific.net/msf.433-436.87

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[5] CFD Research Corporation, 215 Wynn Drive, Huntsville, Alabama, 35805.

[6] F. Baillet, D. Chaussende, L. Charpentier, E. Pernot, M. Pons, R. Madar : Mat. Sci. Forum, Vols 433- 436 (2003), p.103.

DOI: https://doi.org/10.4028/www.scientific.net/msf.433-436.103

[7] D. Chaussende et al., this conference. 0 0, 05 0, 1 0, 15 0, 2 0, 25 0, 3 0, 35 0, 4 0, 45 0 5 10 15 20 25 30 Distance from CVD area (mm) SiC deposition rate (g/h) a b c.