Selective Growth of 4H-SiC on 4H-SiC Substrates using a High Temperature Mask
p.185
p.185
Homoepitaxial Growth of 4H-SiC on Trenched Substrates by Chemical Vapor Deposition
p.189
p.189
Homoepitaxial On-Axis Growth of 4H- and 6H-SiC by CVD
p.193
p.193
High-Speed Growth of High-Purity Epitaxial Layers with Specular Surface on 4H-SiC(000-1) Face
p.197
p.197
Growth of Device Quality 4H-SiC High Velocity Epitaxy
p.201
p.201
Fast Epitaxial Growth of Thick 4H-SiC with Specular Surface by Chimney-Type Vertical Hot-Wall Chemical Vapor Deposition
p.205
p.205
4H-SiC Carbon-Face Epitaxial Layers Grown by Low-Pressure Hot-Wall Chemical Vapor Deposition
p.209
p.209
Influence of C/Si Ratio on the 4H-SiC (0001) Epitaxial Growth and a Keynote for High-Rate Growth
p.213
p.213
Comparative Studies of ‹0001› 4H-SiC Layers Grown with either Silane or HexaMethylDiSilane / Propane Precursor Systems
p.217
p.217
Growth of Device Quality 4H-SiC High Velocity Epitaxy
Abstract:
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Periodical:
Materials Science Forum (Volumes 457-460)
Pages:
201-204
Citation:
Online since:
June 2004
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© 2004 Trans Tech Publications Ltd. All Rights Reserved
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