Growth of Device Quality 4H-SiC High Velocity Epitaxy

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

201-204

DOI:

10.4028/www.scientific.net/MSF.457-460.201

Citation:

R. Yakimova et al., "Growth of Device Quality 4H-SiC High Velocity Epitaxy", Materials Science Forum, Vols. 457-460, pp. 201-204, 2004

Online since:

June 2004

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Price:

$35.00

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