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High-Speed Growth of High-Purity Epitaxial Layers with Specular Surface on 4H-SiC(000-1) Face
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Growth of Device Quality 4H-SiC High Velocity Epitaxy
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Fast Epitaxial Growth of Thick 4H-SiC with Specular Surface by Chimney-Type Vertical Hot-Wall Chemical Vapor Deposition
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4H-SiC Carbon-Face Epitaxial Layers Grown by Low-Pressure Hot-Wall Chemical Vapor Deposition
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Influence of C/Si Ratio on the 4H-SiC (0001) Epitaxial Growth and a Keynote for High-Rate Growth
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Comparative Studies of ‹0001› 4H-SiC Layers Grown with either Silane or HexaMethylDiSilane / Propane Precursor Systems
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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Fast Epitaxial Growth of Thick 4H-SiC with...

Fast Epitaxial Growth of Thick 4H-SiC with Specular Surface by Chimney-Type Vertical Hot-Wall Chemical Vapor Deposition

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

205-208

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.205

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Online since:

June 2004

Authors:

H. Fujiwara, Katsunori Danno, Tsunenobu Kimoto, T. Tojo, Hiroyuki Matsunami

Keywords:

Fast Epitaxy, Micropipe Closing, Photoluminescence (PL), Vertical Hot-Wall CVD

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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