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Fast Epitaxial Growth of Thick 4H-SiC with Specular Surface by Chimney-Type Vertical Hot-Wall Chemical Vapor Deposition
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4H-SiC Carbon-Face Epitaxial Layers Grown by Low-Pressure Hot-Wall Chemical Vapor Deposition
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Influence of C/Si Ratio on the 4H-SiC (0001) Epitaxial Growth and a Keynote for High-Rate Growth
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Comparative Studies of ‹0001› 4H-SiC Layers Grown with either Silane or HexaMethylDiSilane / Propane Precursor Systems
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Growth of Homoepitaxial Films on 4H-SiC(11-20)and 8° Off-Axis 4H-SiC(0001) Substrates and their Characterization
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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Influence of C/Si Ratio on the 4H-SiC (0001)...

Influence of C/Si Ratio on the 4H-SiC (0001) Epitaxial Growth and a Keynote for High-Rate Growth

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

213-216

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.213

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Online since:

June 2004

Authors:

Yuuki Ishida, Tetsuo Takahashi, Kazutoshi Kojima, Hajime Okumura, Kazuo Arai, Sadafumi Yoshida

Keywords:

C/Si Ratio, Epitaxial Growth, High Rate Growth, Homogeneous Nucleation, Si Condensation, Step Bunching

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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Citation:

[1] A. Ellison, J. Zhang, A. Henry and E. Janzen, J. Cryst. Growth 236 (2002), p.225.

[2] K. Masahara, T. Takahashi, M. Kushibe, T. Ohno, J. Nishio, K. Kojima, Y. Ishida, T. Suzuki, T. Tanaka, S. Yoshida and K. Arai, Mater. Sci. Forum, 389-393 (2002), p.179.

DOI: 10.4028/www.scientific.net/msf.389-393.179

[3] Y. Ishida et al., Japanese meeting of SiC and related wide gap semiconductor materials, (2002), IV-9. (in Japanese)

[4] G. Ferro, D. Chaussende, F. Cauwet and Y. Monteil, Mater. Sci. Forum, 389-393 (2002), p.287.