Influence of C/Si Ratio on the 4H-SiC (0001) Epitaxial Growth and a Keynote for High-Rate Growth

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Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

213-216

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Y. Ishida et al., "Influence of C/Si Ratio on the 4H-SiC (0001) Epitaxial Growth and a Keynote for High-Rate Growth ", Materials Science Forum, Vols. 457-460, pp. 213-216, 2004

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June 2004

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[1] A. Ellison, J. Zhang, A. Henry and E. Janzen, J. Cryst. Growth 236 (2002), p.225.

[2] K. Masahara, T. Takahashi, M. Kushibe, T. Ohno, J. Nishio, K. Kojima, Y. Ishida, T. Suzuki, T. Tanaka, S. Yoshida and K. Arai, Mater. Sci. Forum, 389-393 (2002), p.179.

DOI: https://doi.org/10.4028/www.scientific.net/msf.389-393.179

[3] Y. Ishida et al., Japanese meeting of SiC and related wide gap semiconductor materials, (2002), IV-9. (in Japanese).

[4] G. Ferro, D. Chaussende, F. Cauwet and Y. Monteil, Mater. Sci. Forum, 389-393 (2002), p.287.