Influence of C/Si Ratio on the 4H-SiC (0001) Epitaxial Growth and a Keynote for High-Rate Growth

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

213-216

DOI:

10.4028/www.scientific.net/MSF.457-460.213

Citation:

Y. Ishida et al., "Influence of C/Si Ratio on the 4H-SiC (0001) Epitaxial Growth and a Keynote for High-Rate Growth ", Materials Science Forum, Vols. 457-460, pp. 213-216, 2004

Online since:

June 2004

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$35.00

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