Materials Science Forum Vols. 457-460

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https://doi.org/10.4028/www.scientific.net/MSF.457-460

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Paper Title Page

Study of Polytype Switching vs. Micropipes in PVT Grown SiC Single Crystals

Authors: Shao Ping Wang, Edward M. Sanchez, A. Kopec, M. Zhang, O. Hernandez

Analysis of Graphitization during Physical Vapor Transport Growth of Silicon Carbide

Authors: Peter J. Wellmann, Z.G. Herro, Sakwe Aloysius Sakwe, Pierre M. Masri, M.V. Bogdanov, S.Yu. Karpov, A.V. Kulik, M.S. Ramm, Yuri Makarov

Thermodynamic Analysis of the Production of Silicon Carbide via Silicon Dioxide and Carbon

Authors: V.G. Sevastyanov, Yu S. Ezhov, E.P. Simonenko, N.T. Kuznetsov

Faceted Growth of SiC Bulk Crystals

Authors: I.D. Matukov, D.S. Kalinin, M.V. Bogdanov, S.Yu. Karpov, D.Kh. Ofengeim, M.S. Ramm, J.S. Barash, E.N. Mokhov, A.D. Roenkov, Yu.A. Vodakov, M.G. Ramm, Heikki Helava, Yuri Makarov

Theoretical Analysis of the Mass Transport in the Powder Charge in Long-Term Bulk SiC Growth

Authors: A.V. Kulik, M.V. Bogdanov, S.Yu. Karpov, M.S. Ramm, Yuri Makarov

Free Growth of 4H-SiC by Sublimation Method

Authors: Jean Marc Dedulle, Mikhail Anikin, Michel Pons, Elisabeth Blanquet, Alexander Pisch, Roland Madar, Claude Bernard

Advanced PVT Growth of 2 & 3-Inch Diameter 6H SiC Crystals

Authors: Thomas Anderson, Donovan L. Barrett, J. Chen, W.T. Elkington, Ejiro Emorhokpor, A. Gupta, C.J. Johnson, R.H. Hopkins, Charles Martin, Thomas Kerr, E. Semenas, Andrew E. Souzis, C.D. Tanner, Murugesu Yoganathan, Ilya Zwieback

Radial Expansion Growth of SiC Single Crystals with Higher Crystal Quality

Authors: Tatsuo Fujimoto, Hiroshi Tsuge, Masakazu Katsuno, Noboru Ohtani, Hirokatsu Yashiro, Masashi Nakabayashi

Growth and Characterization of SiC Bulk Crystals Grown on an Off-Oriented (11-20) Seed Crystal

Authors: Masakazu Katsuno, Noboru Ohtani, Tatsuo Fujimoto, Hirokatsu Yashiro

Growth of Bulk SiC by Halide Chemical Vapor Deposition

Authors: M. Fanton, Marek Skowronski, David Snyder, Hun Jae Chung, Saurav Nigam, B. Weiland, Sung Wook Huh