Materials Science Forum Vols. 457-460

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https://doi.org/10.4028/www.scientific.net/MSF.457-460

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Paper Title Page

Characterization of Thick 2-Inch 4H-SiC Layers Grown by the Continuous Feed-Physical Vapor Transport Method

Authors: Didier Chaussende, Carole Balloud, Laurent Auvray, Francis Baillet, Marcin Zielinski, Sandrine Juillaguet, Michel Mermoux, Etienne Pernot, Jean Camassel, Michel Pons, Roland Madar

Effect of Thermal Field on Interface Step Structures during PVT Growth of (0001)Si 6H-SiC

Authors: Z.G. Herro, Boris M. Epelbaum, Matthias Bickermann, Pierre M. Masri, Albrecht Winnacker

Large Diameter and Long Length Growth of SiC Single Crystal

Authors: Tomohisa Kato, Takaya Ohno, Fusao Hirose, Naoki Oyanagi, Shin Ichi Nishizawa, Kazuo Arai

Effect of Crucible Design on the Shape and the Quality in 6H-SiC Crystals Grown by Physical Vapor Transport

Authors: Myung Yoon Um, Ho Keun Song, Hoon Joo Na, Dae Hwan Kim, In Bok Song, Sang Yong Jung, Jae Kyeong Jeong, Jae Bin Lee, Hyeong Joon Kim

103

Sublimation Growth of SiC Crystal Using Modified Crucible Design on 4H-SiC {03-38} Substrate and Defect Analysis

Authors: Tomoaki Furusho, H. Takagi, S. Ota, Hiromu Shiomi, Shigehiro Nishino

107

Natural Crystal Habit and Preferential Growth Directions during PVT of Silicon Carbide

Authors: Z.G. Herro, Boris M. Epelbaum, Matthias Bickermann, Pierre M. Masri, Christoph Seitz, Andreas Magerl, Albrecht Winnacker

111

High Quality SiC Bulk Growth by Sublimation Method using Elemental Silicon and Carbon Powder as SiC Source Materials

Authors: S. Ota, Tomoaki Furusho, H. Takagi, S. Oshima, Shigehiro Nishino

115

Flux Growth of SiC Crystals from Eutectic Melt SiC-B₄C

Authors: Boris M. Epelbaum, P.A. Gurzhiyants, Z.G. Herro, Matthias Bickermann, Albrecht Winnacker

119

Solution Growth of Self-Standing 6H-SiC Single Crystal Using Metal Solvent

Authors: Kazuhiko Kusunoki, S. Munetoh, Kazuhito Kamei, Mitsuhiro Hasebe, Toru Ujihara, Kazuo Nakajima

123

The Effect of a Periodic Movement on the Die of the Bottom Line of the Melt/Gas Meniscus in the Case of Silicon Filaments Grown from the Melt in a Vacuum by Edge-Defined Film-Fed Growth Method

Authors: L. Braescu, A.M. Balint, St. Balint

127