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Online since: January 2010
Authors: Efstathios K. Polychroniadis, Alkyoni Mantzari, Maya Marinova
Rumyantsev in: Properties of Advanced SemiconductorMaterials Ga�, Al�, SiC, B�, SiC, SiGe . edited by.
Abe: Microelectronic Engineering 83 (2006), p. 185
Forum 483-485 (2005), p. 319 [11] M.
Forum 600-603 (2009), p. 67
Forum Vol. 433-436 (2003), p. 3
Online since: January 2012
MEMC2012 is a comprehensive conference,and it is an integrated conference concentrating its focus upon Engineering Materials, Energy,Management and Control.
In the proceeding, you can learn much more knowledge about Engineering Materials, Energy,Management and Control of researchers all around the world.
In order to meet high standard of Advanced Material Research,the organization committee has made their efforts to do the following things.
The goal of the conference is to provide researchers from Engineering Materials, Energy,Management and Control.
fields with a free exchanging forum to share the new ideas, new innovation and solutions with each other.
Online since: October 2013
Preface MECB2013 is a comprehensive conference,and it is an integrated conference concentrating its focus upon Material Engineering,Chemistry and Bioinformatics.
In the proceeding, you can learn much more knowledge about Material Engineering,Chemistry and Bioinformatics of researchers all around the world.
In order to meet high standard of Advanced Material Research,the organization committee has made their efforts to do the following things.
The goal of the conference is to provide researchers from Material Engineering,Chemistry and Bioinformatics fields with a free exchanging forum to share the new ideas, new innovation and solutions with each other.
Online since: October 2011
MEAEI2011 is a comprehensive conference,and it is an integrated conference concentrating its focus upon Material Engineering, Architectural Engineering and Informatization .
In the proceeding, you can learn much more knowledge about Material Engineering, Architectural Engineering and Informatization of researchers all around the world.
In order to meet high standard of Advanced Materials Research,the organization committee has made their efforts to do the following things.
The goal of the conference is to provide researchers from Material Engineering, Architectural Engineering and Informatization fields with a free exchanging forum to share the new ideas, new innovation and solutions with each other.
Online since: May 2012
Authors: Nicolas G. Wright, Simon Barker, K.V. Vassilevski, I.P. Nikitina, A.B. Horsfall
Horsfall1 1 School of Electrical, Electronic and Computer Engineering, Newcastle University, Newcastle, NE1 7RU, U.K.
Saddow, et al.: Advances in silicon carbide processing and applications (2004) [3] J.
Forum Vol. 645-648 (2010) pp. 953-956 [5] S.
Forum Vol. 615-617 (2009) pp. 885-888 [6] S.
Forum Vol. 615-617 (2009) pp. 929-932 [8] M.
Online since: October 2007
Authors: Ming Bo Yang, Yan Long Ma, Fu Sheng Pan
Advanced Materials-SAMPE.
Vol.35(2003), p.32 [12] M.Pekguleryuz and A.A Kaya: Advanced Engineering Materials.
No.100(1992), p.353 [19] J.Bai, Y.S.Sun and S.Xun: Materials Science and Engineering A.
Medraj: Science and Technology of Advanced Materials, 2007(in press) [26] Z Zhang, R Trembalay and D Dube: Mater.
Forum.
Online since: February 2022
Authors: Igor A. Savin, A.V. Shaparev, S.N. Ptichkin
Series: Materials Science and Engineering. 969 (2020) 012021
Gavarieva, On the issue of heat balance of molds for injection molding of non-ferrous metal alloys, IOP Conference Series: Materials Science and Engineering. 969(1) (2020) 012069
Gavarieva, Influence of multilayer coatings on the operational stability of molds for injection molding, IOP Conference Series: Materials Science and Engineering. 134 (2016) 012031
Fashutdinov, Improving the efficiency of shaving through the use of wear-resistant coatings, IOP Conference Series: Materials Science and Engineering. 570(1) (2019) 012024
Fu, High-entropy alloys: Emerging materials for advanced functional applications, Journal of Materials Chemistry A. 9(2) (2021) 663-701
Online since: June 2010
CNCE is a leading Asia-Pacific Conference on Nanotechnology and Computer Engineering.
Welcome to 2010 IITA International Conference on Nanotechnology and Computer Engineering (CNCE 2010) will be held in Qingdao, China, July 20-21, 2010.CNCE 2010 is co-sponsored by Intelligent Information Technology Application Research Association, Hong Kong and National University of Singapore, Singapore We are delighted to invite you to participate in 2010 IITA International Conference on Nanotechnology and Computer Engineering (CNCE 2010).
The theme of CNCE 2010 is: Nanotechnology and Industy Application, Computer Science and Engineering, Communication and Management, Control and Automation.
The mission is to bring together innovative academics and industrial experts in the field of Nanotechnology and Computer Engineering to a common forum.
Qihai Zhou, Southwestern University of Finance and Economics, China Tianshu Zhou, George Mason University, USA Shao Xi, Nanjing University of Posts and Telecommunication, China Xueming Zhang, Beijing Normal University, China Peide Liu, Shandong Economic University, China Qian Yin, Beijing Normal University, China Zhigang Chen, Central South University, China Hoi-Jun Yoo, Korea Advanced Institute of Science and Technology Chin-Chen Chang, Feng Chia University, Taiwan.
Online since: June 2018
Authors: Gao Yang Zhao, Ying Min Wang, Bin Li, Kai Li Mao
Zhao1,d 1Department of Materials Science & Engineering, Xi’an University of Technology, Xi’an, China 2The 2nd Research Institute of China Electronics Technology Group Corporation, Taiyuan, China amaokaili001@aliyun.com, bwymzll@126.com, ccetclb@163.com, dzhaogy@xaut.edu.cn Keywords: Silicon Carbide; Obtuse Triangular Defects; Confocal Microscope; Photoluminescence Abstract: The obtuse triangular defects would result in higher leakage currents and the preferential gate oxide breakdown of SiC devices.
Forum, 740-742, p.649-652 (2013)
Forum, 679-680, p.123-126 (2011)
Forum, 778-780, p.309-312 (2014)
Forum, 778-780, p.394-397 (2014)
Online since: December 2004
Authors: Tai Chiu Lee, S.L. Yim, Kai Ming Yu, D. Kwok
Materials Science Forum Vols. *** (2004) pp.891-894 online at http://scientific.net Ó 2004 Trans Tech Publications, Switzerland Taguchi Methods to Optimize TiN Coating Surface Roughness S.L.
Lee1,d 1 Department of Industrial and Systems Engineering, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong 2 Techmart Platit Limited, Unit 6, 8/F., Block B, Hoi Luen Ind'l Ctr., 55 Hoi Yuen Rd., Kwun Tong, Kowloon, Hong Kong a ann.yim@polyu.edu.hk, bmfkmyu@polyu.edu.hk, cdavid.kwok@platit.com.hk, d mftclee@inet.polyu.edu.hk Keywords: Taguchi method, Optimization, Titanium nitride, PVD coating, Roughness Abstract.
Cutting speed, feed rate, depth of cut, workpieces hardness and cutting tool materials Advances in Materials Manufacturing Science and Technology 892 are variables in the cutting process.
Materials Science Forum Vols. *** 893 Table 2 The L9 Orthogonal array for the experiments [5], Ra value and S/N ratio for each run L9 Ra value (µm) Coating Parameters or factors Trial no.
To investigate the optimal condition when considering roughness Advances in Materials Manufacturing Science and Technology 894 (Ra), a smaller-the-best approach is applied.