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MEIME2011 is a comprehensive conference,and it is an integrated conference concentrating its focus upon Mechanical Engineering, Industry and Manufacturing Engineering .
In the proceeding, you can learn much more knowledge about Mechanical Engineering, Industry and Manufacturing Engineeringof researchers all around the world.
In order to meet high standard of Advanced Materials Research,the organization committee has made their efforts to do the following things.
The goal of the conference is to provide researchers from Automation, Communication,Architectonics and Materials fields with a free exchanging forum to share the new ideas, new innovation and solutions with each other.

Zhao1,d 1Department of Materials Science & Engineering, Xi’an University of Technology, Xi’an, China 2The 2nd Research Institute of China Electronics Technology Group Corporation, Taiyuan, China amaokaili001@aliyun.com, bwymzll@126.com, ccetclb@163.com, dzhaogy@xaut.edu.cn Keywords: Silicon Carbide; Obtuse Triangular Defects; Confocal Microscope; Photoluminescence Abstract: The obtuse triangular defects would result in higher leakage currents and the preferential gate oxide breakdown of SiC devices.
Forum, 740-742, p.649-652 (2013)
Forum, 679-680, p.123-126 (2011)
Forum, 778-780, p.309-312 (2014)
Forum, 778-780, p.394-397 (2014)

Growth and Characterization of Thick Multi-Layer 4H-SiC Epiwafer for Very High-Voltage p-Channel IGBTs Tetsuya Miyazawa1,a *, Koji Nakayama2,b, Atsushi Tanaka2,c, Katsunori Asano2,d, Shi-yang Ji3,e, Kazutoshi Kojima3,f, Yuuki Ishida3,g, and Hidekazu Tsuchida1,h 1Central Research Institute of Electric Power Industry (CRIEPI), 2-6-1 Nagasaka, Yokosuka, Kanagawa, 240-0196, Japan 2Power Engineering R&D Center, Kansai Electric Power Co., Inc., 3-11-20 Nakoji, Amagasaki, Hyogo, 661-0974, Japan 3National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki, 305-8568, Japan ayo-miya@criepi.denken.or.jp, bnakayama.koji@a3.kepco.co.jp, ctanaka.atsushi@b5.kepco.co.jp, dasano.katsunori@c2.kepco.co.jp, eaist-ki@aist.go.jp, fkazu-kojima@aist.go.jp, gy-ishida@aist.go.jp, htsuchida@criepi.denken.or.jp Keywords: 4H-SiC, epitaxial growth, IGBT, high voltage, carrier lifetime Abstract.
Forum 778-780 (2014) 1030
Forum 778-780 (2014) 1038

Design and Simulation Analysis of Compost Pallet Transfer Device of Agaricus Bisporus Factory Cultivation Wuyun Zhao1,a, Jie Yang1,b, XuepengTang1,c, Fei Dai1,d 1School of Engineering, Gansu Agricultural University, Lanzhou 730070, PR China a zhaowy@gsau.edu.cn, byj2511@126.com, cgndtxp@163.com, d442670867@qq.com Key words:Agaricus bisporus; Factory; Compost pallet; Transfer device; Motion simulation Abstract.
The introduction of foreign advanced machinery and equipment businesses with their own reality, to optimize the innovation of foreign products.
Forum Vol.20(2012), p. 4627.
Mycelium liquid culture medium of edible fungi of China.Forum Vol. 4 (2007),p. 34.

An understanding of boron diffusion post rapid thermal annealing in general, and out of in situ doped epitaxially grown silicon-germanium films in particular, is essential to hetero junction engineering in microelectronic device technology today.
Introduction Engineering of in situ Boron doped junctions in microelectronic technology is key to enable high performance devices [5-6].
Based on advanced rapid thermal anneal experiments post Born implant and LDD model approximation [3], diffusion learning can be transferred to in situ Boron doped applications, because the diffusion model remains the same.
As shown in sample overview of Tab. 1, several samples got processed further by Spike anneal at 1070°C and rapid thermal anneal (RTA) at 1050°C/5s, advanced thermal processes as typical in semiconductor industry [12].
-J.; Herzog, O.; Ruelke, H.; Hubler, P.; Stephan, R.; Greenlaw, D.; Raab, M.; Kepler, N.; Chen, H.; Chidambarrao, D.; Fried, D.; Holt, J.; Lee, W.; Nii, H.; Panda, S.; Sato, T.; Waite, A.; Liming, S.; Rim, K.; Schepis, D.; Khare, M.; Huang, S.F.; Pellerin, J.; Su, L.T.; "Integration and optimization of embedded-sige, compressive and tensile stressed liner films, and stress memorization in advanced SOI CMOS technologies," Electron Devices Meeting, 2005.

MEAEI2011 is a comprehensive conference,and it is an integrated conference concentrating its focus upon Material Engineering, Architectural Engineering and Informatization .
In the proceeding, you can learn much more knowledge about Material Engineering, Architectural Engineering and Informatization of researchers all around the world.
In order to meet high standard of Advanced Materials Research,the organization committee has made their efforts to do the following things.
The goal of the conference is to provide researchers from Material Engineering, Architectural Engineering and Informatization fields with a free exchanging forum to share the new ideas, new innovation and solutions with each other.

., Exploitation of Artificial Intelligence Methods for Prediction of Atmospheric Corrosion, Defect and Diffusion Forum, Volumes 326- 28, 2012, p. 65-68, 2012, ISBN 978-3-03785-400-6 [3] Kreislova K., et al., Method for creation of actual maps of atmospheric corrosivity for the Czech Republic, proceeding of EUROCORR 2015, Graz, Austria [4] K.
Novakova, Corrosion protection of infrastructure of power industry, Periodical of Materials Science Forum – Corrosion in Power Industry, 2015, Vol. 811, pp. 31 – 40, ISSN: 1662-9752, doi:10.4028/www.scientific.net/MSF.811.31 [5] V.
Kreislova, Prediction of Corrosion Processes on Weathering Steel Bridges, Key Engineering Materials – Advances in Fracture and Damage Mechanics, Vol. 627, 2015, Trans Tech Publications, Switzerland, pp. 321-324

Lecture Notes in Mechanical Engineering. (2022) 323–333
International Journal of Engineering and Technology(UAE). 7(3) (2018) 587–596
Lecture Notes in Mechanical Engineering. (2023) 237–246
Advances in Mathematical Physics. 1 (2021) 1–10
Mechanics and Mechanical Engineering. 22 (2018) 727–737

The aim of ICMAM2011 is to provide a platform for researchers, engineers, academicians as well as industrial professionals from all over the world to present their research results and development activities in Manufacturing Technology and Processing, Mechatronics and Automation, Mechatronics and Embedded System Applications and the other related topics.
The goal of ICMAM2011 is also to provide international scientific forums for exchange of new ideas focus on information systems and computational intelligence.
Korsunsky, University of Oxford, England International Program Committee Chairs(Taiwan) Chun-Fei Hsu, Chung Hua University, Taiwan Chih-Min Lin, Yuan Ze University, Taiwan Jen-Yuan (James) Chang, National Tsing Hua University, Taiwan Jeng-Haur Horng, National Formosa University, Taiwan International Program Committee Chairs(Japan) Tomonori Hashiyama, The University of Electro Communications, Japan International Program committee Chairs(India) Karm Veer Arya, ABV-Indian Institute of Information Technology & Management,India International Program Committee Chairs(Hungary) Marta Takacs, Obuda University, Hungary Laszlo Horvath, Obuda University, Hungary Jozsef Tar, Obuda University, Hungary International Program Committee Chairs(New Zealand) Raj Das,Department of Mechanical Engineering and Centre for Advanced Composite Materials University of Auckland,New Zealand Program Committee Zhigang Li,Hong Kong University of Science and Technology,Hong Kong
Pithawalla College of Engineering and Technology, India Ping Zheng,Hong Kong University of Science and Technology,Hong Kong Mohd.

Army Advanced Combat Helmet against shockwave by finite element analysis, concluded that 2mm thick lining made by polyuria material can make the helmet has best shock capability against shockwave [3,4].
Sports Engineering, Vol. 8.(2005) No.3, p. 209
Journal of Materials Engineering and Performance, Vol. 20.(2011) No.6, p. 877
Journal of Materials Engineering and Performance, Vol. 39.(2011) No.2, p. 276
Standard Manual of Engineering Plastic (Standards Press of China, China 2010).