Thermal Stress Response of Silicon Carbide pin Diodes Used as Photovoltaic Devices

Simon Barker; K.V. Vassilevski; I.P. Nikitina; Nicolas G. Wright; A.B. Horsfall

doi:10.4028/www.scientific.net/MSF.717-720.997

Paper Titles

Positive Temperature Coefficient SiC PiN Diodes
p.981

Fully Ion Implanted Vertical p-i-n Diodes on High Purity Semi-Insulating 4H-SiC Wafers
p.985

Electrical Characteristics of 4H-SiC Pin Diode with Carbon Implantation or Thermal Oxidation
p.989

Physical Modelling of 4H-SiC PiN Diodes
p.993

Thermal Stress Response of Silicon Carbide pin Diodes Used as Photovoltaic Devices
p.997

Effect of Surface Morphology on the On-State Resistance of SiC Photoconductive Semiconductor Switches
p.1001

Novel Low V_ON Poly-Si/4H-SiC Heterojunction Diode Using Energy Barrier Height Control
p.1005

Fabrication of 4H-SiC/Nanocrystalline Diamond PN Junctions
p.1009

Recovery of Bipolar-Current Induced Degradations in High-Voltage Implanted-Gate Junction Field Effect Transistors
p.1013

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Thermal Stress Response of Silicon Carbide pin Diodes Used as Photovoltaic Devices

Abstract:

Recent progress in the field of silicon carbide sensor technology, such as wireless communications and sensors, has demonstrated the need for a resilient energy supply as an alternative to conventional batteries. Previous work has shown that silicon carbide is an effective energy harvester of UV light in high temperature and hostile environments. Until now however, there has been little work undertaken to assess the long-term effects of elevated temperature on such devices. Although it is understood that silicon carbide is unaffected by long-term temperature exposure below 400 °C, there has been little research into the overall device response and how changes in contact metallisation affect the photovoltaic behaviour.